A method of placing a protective member on a workpiece includes a sheet producing step of heating a plate-shaped thermoplastic resin to soften or melt the same while gripping and pulling outer edges of the thermoplastic resin in at least four directions to produce a sheet-like protective member, and after the sheet producing step, an integrating step of heating and bringing the sheet-like protective member into intimate contact with the workpiece to integrate the workpiece and the protective member with each other.

A technical object of the present invention is to devise a supporting glass substrate suitable for supporting a substrate to be processed to be subjected to high-density wiring and a method of manufacturing the supporting glass substrate, to thereby contribute to an increase in density of a semiconductor package. The supporting glass substrate of the present invention has a thermal shrinkage ratio of 20 ppm or less when a temperature of the supporting glass substrate is increased from room temperature to 400° C. at a rate of 5° C./minute, kept at 400° C. for 5 hours, and decrease to room temperature at a rate of 5° C./minute.

A method of processing a semiconductor substrate is provided. The method may include forming a film over a first side of a semiconductor substrate, forming at least one separation region in the semiconductor substrate between a first region and a second region of the semiconductor substrate, arranging the semiconductor substrate on a breaking device, wherein the breaking device comprises a breaking edge, and wherein the semiconductor substrate is arranged with the film facing the breaking device and in at least one alignment position with the at least one separation region aligned with the breaking edge, and forcing the semiconductor substrate to bend the first region with respect to the second region over the breaking edge until the film separates between the breaking edge and the at least one separation region.

A temporary adhesion method for temporarily adhering a wafer to a support via a temporary adhesive layer, the wafer having a first main surface including a circuit and a second main surface to be processed, the second main surface being located on an opposite side to the first main surface, wherein a temporary adhesion between the first main surface of the wafer and the support is performed via the temporary adhesive layer including a dry adhesive fiber structure having a plurality of pillar structures.

A manufacturing method of a package includes at least the following steps. A carrier is provided. An inductor is formed over the carrier. The inductor includes a first portion, a second portion, and a third portion. The first portion is parallel to the third portion, and the second portion connects the first portion and the third portion. A die is placed over the carrier. The die is surrounded by the inductor. An encapsulant is formed between the first portion and the third portion of the inductor. The encapsulant laterally encapsulates the die and the second portion of the inductor.

A method of processing a substrate, with a first major surface of the substrate removably bonded to a first major surface of a first carrier and a second major surface of the substrate removably bonded to a first major surface of a second carrier, includes initiating debonding at a first location of an outer peripheral bonded interface between the substrate and the first carrier to separate a portion of the first carrier from the substrate. The method further includes propagating a first debond front from the first debonded location along a first direction extending away from the first debonded location by sequentially applying a plurality of lifting forces to the first carrier at a corresponding plurality of sequential lifting locations of the first carrier.

A semiconductor device includes a molded body and an interconnection layer. The molded body includes a semiconductor chip, at least one terminal body disposed around the semiconductor chip and a resin member provided between the semiconductor chip and the terminal body. The molded body has a first surface, a second surface opposite to the first surface and a side surface connected to the first and second surfaces. The interconnection layer is provided on the first surface of the molded body. The interconnection layer includes an interconnect electrically connecting the semiconductor chip and the terminal body. The terminal body has first and second contact surfaces. The first contact surface is exposed at the first or second surface of the molded body. The second contact surface is connected to the first contact surface and exposed at the side surface of the molded body.

A resin composition for temporary fixing, the resin composition containing (A) a thermoplastic resin, (B) a thermosetting resin, and (C) a silicone compound, the resin composition having a shear viscosity of 4000 Pa.Math.s or less at 120° C. and a rate of change in the shear viscosity being within 30% as determined before and after the resin composition is left to stand for 7 days in an atmosphere of 25° C.

The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.