A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.

Various system embodiments for millimeter-wave chip packaging are disclosed in the present disclosure for smooth millimeter wave signal transition and good multi-channel signal isolation. The chip packaging features a substrate and a chip electrically connected using a plurality of metal pillars. A signal pillar and surrounding metal pillar may form a ground-signal-ground (GSG) pillar structure. A chip coplanar waveguide (CPW) structure may be formed on the chip around a signal path. A substrate CPW structure may also be form around a signal strip, which is electrically connected to the signal path. Characteristic impedances of the GSG pillar structure, the chip CPW structure and the substrate CPW structure may be within a predetermined range of each other to ensure smooth millimeter wave signal transition with minimum signal loss or distortion.

Stacked superconducting integrated circuits with three dimensional resonant clock networks are described. An apparatus, including a first superconducting integrated circuit having a first clock distribution network for distributing a first clock signal in the first superconducting integrated circuit, is provided. The apparatus further includes a second superconducting integrated circuit, stacked on top of the first superconducting integrated circuit, having a second clock distribution network for distributing a second clock signal in the second superconducting integrated circuit, where each of the first clock distribution network and the second clock distribution network comprises a clock structure having a plurality of unit cells, where each of the plurality of unit cells includes at least one spine and at least one stub, the at least one stub inductively coupled to a first superconducting circuit, and where each of the first clock signal and the second clock signal has a same resonant frequency.

A method of packaging a radio frequency (RF) transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.

Various system embodiments for millimeter-wave chip packaging are disclosed in the present disclosure for smooth millimeter wave signal transition and good multi-channel signal isolation. The chip packaging features a substrate and a chip electrically connected using a plurality of metal pillars. A signal pillar and surrounding metal pillar may form a ground-signal-ground (GSG) pillar structure. A chip coplanar waveguide (CPW) structure may be formed on the chip around a signal path. A substrate CPW structure may also be form around a signal strip, which is electrically connected to the signal path. Characteristic impedances of the GSG pillar structure, the chip CPW structure and the substrate CPW structure may be within a predetermined range of each other to ensure smooth millimeter wave signal transition with minimum signal loss or distortion.

A method of forming a semiconductor structure includes: providing a first inter-level dielectric (ILD) layer overlying a molding layer, the molding layer including a transmitter ground structure and a receiver ground structure; forming first openings through the first ILD layer to expose the transmitter and receiver ground structures; forming first lower transmitter and receiver electrodes in the first openings to be respectively coupled to the transmitter and receiver ground structures; forming a first dielectric waveguide overlying the first ILD layer, and first lower transmitter and receiver electrodes; depositing a second ILD layer overlying the first dielectric waveguide; forming second lower transmitter and receiver electrodes extending through the second ILD and respectively coupled to the transmitter and receiver ground structures; and forming a second dielectric waveguide overlying the second ILD layer and the second lower transmitter and receiver electrodes.

Antenna modules employing three-dimensional (3D) build-up on mold package to support efficient integration of radio-frequency (RF) circuitry, and related fabrication methods. The antenna module includes a RF transceiver whose circuitry is split over multiple semiconductor dies (“dies”) so different semiconductor devices can be formed in different semiconductor structures. The antenna module is provided as a 3D build-up on mold package to reduce lengths of die-to-die (D2D) interconnections between circuits in different dies. First and second die packages that include respective first and second dies encapsulated in respective first and second mold layers are coupled to each other in a vertical direction in a 3D stacked arrangement with active faces of the first and second dies facing each other to provide a reduced distance between the active faces of the first and second dies. An antenna is stacked on the second die package to provide an antenna(s) for the antenna module.

An electronic package structure and its manufacturing method are provided. The electronic package structure includes an interposer, a circuit board, a chip, and a circuit structure. The interposer includes an interposer substrate and a coaxial conductive element located in the interposer substrate. The interposer substrate includes a cavity. The coaxial conductive element includes a first conductive structure, a second conductive structure surrounding the first conductive structure, and a first insulation structure. The first insulation structure is disposed between the first and second conductive structures. The circuit board is disposed on a lower surface of the interposer substrate and electrically connected to the coaxial conductive element. The chip is disposed in the cavity and located on the circuit board, so as to be electrically connected to the circuit board. The circuit structure is disposed on an upper surface of the interposer substrate and electrically connected to the coaxial conductive element.

The present disclosure provides a semiconductor device. The semiconductor device includes a carrier having a first side and a second side adjacent to the first side. The semiconductor device also includes a first antenna adjacent to the first side and configured to operate at a first frequency and a second antenna adjacent to the second side and configured to operate at a second frequency different from the first frequency. An method of manufacturing a semiconductor device is also provided.

The present disclosure provides a semiconductor device package. The semiconductor device package includes a first antenna pattern disposed at a first elevation and a second antenna pattern disposed at a second elevation different from the first elevation. The first antenna pattern and the second antenna pattern define an air cavity. The semiconductor device package also includes a circuit layer. The air cavity is between the first antenna pattern, the second antenna pattern, and the circuit layer.