H01L2223/6638

VARIABLE IN-PLANE SIGNAL TO GROUND REFERENCE CONFIGURATIONS
20200312759 · 2020-10-01 ·

Embodiments disclosed herein include electronic packages with improved differential signaling architectures. In an embodiment, the electronic package comprises a package substrate, where the package substrate comprises alternating metal layers and dielectric layers. In an embodiment, a first trace is embedded in the package substrate, where the first trace has a first thickness that extends from a first metal layer to a second metal layer. In an embodiment, the electronic package further comprises a first ground plane laterally adjacent to a first side of the first trace, and a second ground plane laterally adjacent to a second side of the first trace.

High-frequency ceramic board and high-frequency semiconductor element package

A highly reliable high-frequency ceramic board appropriately transmitting signals with high frequencies up to 50 GHz includes a flat ceramic substrate, a pair of ground lines bonded to a peripheral portion of a back surface of the ceramic substrate, a first lead pad electrode bonding the ground lines, at least one pair of signal lines between the ground lines, second lead pad electrodes attached where the signal lines are bonded, and a groove-like recess between the second lead pad electrodes. The pair of signal lines forms a differential transmission line. An interval L.sub.GS between a first edge of the first lead pad electrode and a second edge of a corresponding second lead pad electrode and an interval L.sub.SS between facing second edges satisfy L.sub.SS<2L.sub.GS.

CIRCUIT STRUCTURE AND CHIP PACKAGE

A circuit structure including a first signal line and a second signal line is provided. The first signal line includes a first line segment, a first ball grid array pad, and a first through hole disposed between the first line segment and the first ball grid array pad. The second signal line includes a second line segment, a second ball grid array pad, and a second through hole disposed between the second line segment and the second ball grid array pad. In a plan view, a line connecting the center of the first ball grid array pad and the center of the second ball grid array pad has a first distance, a line connecting the center of the first through hole and the center of the second through hole has a second distance, and the first distance is less than the second distance. A chip package is also provided.

Millimeter wave integrated circuit and system with a low loss package transition
10784215 · 2020-09-22 ·

According to an aspect of the present invention, an electronic system (499) operative on a millimeter signal comprises an integrated circuit (401) comprising a first solder ball (420A) and a second solder ball (420B) respectively coupled to a positive and a negative signal interface points (412 and 413) of a differential millimeter signal on a die (410) housed in the integrated circuit (401), wherein the first and the second solder balls (420A and 420B) are positioned one behind other from an edge of the integrated circuit (401) and a three-path coplanar waveguide (CPW) comprising a center path (495B) and a two adjacent paths (495A and 495C) formed on a printed circuit board (PCB) (490) such that the center path (495B) is coupled to the first solder ball that is in front and the two adjacent paths coupled to the second solder ball that is behind the first solder ball.

OPTICAL MODULE AND MANUFACTURING METHOD OF OPTICAL MODULE

An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

MINIMIZATION OF INSERTION LOSS VARIATION IN THROUGH-SILICON VIAS (TSVs)

An electronic device package is described. The electronic device package includes one or more dies. The electronic device package includes an interposer coupled to the one or more dies. The electronic device package also includes a package substrate coupled to the interposer. The electronic device package includes a plurality of through-silicon vias (TSVs) in at least one die of the one or more dies, or the interposer, or both. The electronic device package includes a passive equalizer structure communicatively coupled to a TSV pair in the plurality of TSVs. The passive equalizer structure is operable to minimize a level of insertion loss variation in the TSV pair.

Semiconductor device

Performance of a semiconductor device is improved. The semiconductor device includes a semiconductor chip and a chip component that are electrically connected to each other via a wiring substrate. The semiconductor chip includes an input/output circuit and an electrode pad electrically connected to the input/output circuit and transmitting the signal. The chip component includes a plurality of types of passive elements and includes an equalizer circuit for correcting signal waveforms of the signal, and electrodes electrically connected to the equalizer circuit. The path length from the signal electrode of the semiconductor chip to the electrode of the chip component is 1/16 or more and 3.5/16 or less with respect to the wavelength of the signal.

Semiconductor package having inductive lateral interconnects

Semiconductor packages including a lateral interconnect having an arc segment to increase self-inductance of a signal line is described. In an example, the lateral interconnect includes a circular segment extending around an interconnect pad. The circular segment may extend around a vertical axis of a vertical interconnect to introduce an inductive circuitry to compensate for an impedance mismatch of the vertical interconnect.

Compound via RF transition structure in a multilayer high-density interconnect
10727190 · 2020-07-28 · ·

A multilayer circuit board having a central conductor and core layers between a first set of alternating layers and a second set of alternating layers. The central conductor includes a first compound via through the first set of alternating layers, and a second compound via through the second set of alternating layers. A gap extends from a first side of the multilayer circuit board to a second side of the multilayer circuit board. A first array of ground protrusions surrounds the gap and is arranged in a first pattern on the first side of the multilayer circuit board. A second array of ground protrusions surrounds the gap and is arranged in a second pattern on the second side of the multilayer circuit board. A ground path connects the first array of ground protrusions to the second array of ground protrusions.

COMPOUND VIA RF TRANSITION STRUCTURE IN A MULTILAYER HIGH-DENSITY INTERCONNECT
20200211986 · 2020-07-02 · ·

A multilayer circuit board having a central conductor and core layers between a first set of alternating layers and a second set of alternating layers. The central conductor includes a first compound via through the first set of alternating layers, and a second compound via through the second set of alternating layers. A gap extends from a first side of the multilayer circuit board to a second side of the multilayer circuit board. A first array of ground protrusions surrounds the gap and is arranged in a first pattern on the first side of the multilayer circuit board. A second array of ground protrusions surrounds the gap and is arranged in a second pattern on the second side of the multilayer circuit board. A ground path connects the first array of ground protrusions to the second array of ground protrusions.