A method includes forming a first redistribution line, forming a polymer layer including a first portion encircling the first redistribution line and a second portion overlapping the first redistribution line, forming a pair of differential transmission lines over and contacting the polymer layer, and molding the pair of differential transmission lines in a molding compound. The molding compound includes a first portion encircling the pair of differential transmission lines, and a second portion overlapping the pair of differential transmission lines. An electrical connector is formed over and electrically coupling to the pair of differential transmission lines.

A high peak bandwidth I/O channel embedded within a multilayer surface interface that forms the bus circuitry electrically interfacing the output or input port on a first semiconductor die with the input or output port on a second semiconductor die.

The present disclosure relates to a chip on film package, in which communication wires for communication with a control circuit are disposed to traverse a semiconductor chip thereunder so as to simplify the wiring inside the semiconductor chip.

Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, having a first surface and an opposing second surface including a first direct bonding region at the second surface with first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component, having a first surface and an opposing second surface, including a second direct bonding region at the first surface with second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is coupled to the first microelectronic component by the first and second direct bonding regions; and a shield structure in the first direct bonding dielectric material at least partially surrounding the one or more of the first metal contacts.

An RF flip chip is provided in which a local bump region adjacent a die corner includes a balun having a centrally-located bump.

A semiconductor device includes first member that includes a switch made of a semiconductor element made from an elemental semiconductor. The first member is joined to a second member including a radio-frequency circuit including a semiconductor element made from a compound semiconductor. The switch and the radio-frequency circuit are connected by a path. The path includes an inter-member connection wire made of a metal pattern arranged on an interlayer insulating film extending from a surface of the second member to a surface of the first member or a conductive member allowing a current to flow in a direction crossing an interface where the first member and the second member are joined.

A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.

A signal transmission method is applied to a receiving terminal so as to improve the anti-interference capability of the signals on the transmission line, and the signal transmission method includes: receiving a signal sent by a transmitting terminal through a transmission line; detecting whether there is a transmission error in the received signal; and when there is a transmission error in the received signal, adjusting at least one parameter of specified parameters affecting an anti-interference capability of signals on the transmission line, and/or controlling the transmitting terminal to adjust the at least one parameter of the specified parameters affecting the anti-interference capability of signals on the transmission line.

A semiconductor optical device includes: a laser for emitting light; a modulator for modulating the light using an electroabsorption effect; a chip capacitor that is electrically connected in parallel to the laser; a chip inductor that is electrically connected in series to the chip capacitor, is electrically connected in series to the laser and the chip capacitor as a whole, and includes a first terminal and a second terminal; a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other; an electrical wiring group in which the laser, the modulator, the chip capacitor, and the chip inductor are electrically connected to each other; and a substrate on which the laser, the modulator, the chip capacitor, and the chip inductor are mounted.

A package device comprises a first transceiver comprising a first integrated circuit (IC) die and transmitter circuitry, and a second transceiver comprising a second IC die and receiver circuitry. The receiver circuitry is coupled to the transmitter circuitry via a channel. The package device further comprises an interconnection device connected to the first IC die and the second IC die. The interconnection device comprises a channel connecting the transmitter circuitry with the receiver circuitry, and a passive inductive element disposed external to the first IC die and the second IC die and along the channel.