The present invention ultra-low loss high energy density dielectric layers having femtosecond (10.sup.−15 sec) polarization response times within a chip stack assembly to extend impedance-matched electrical lengths and mitigate ringing within the chip stack to bring the operational clock speed of the stacked system closer to the intrinsic clock speed(s) of the semiconductor die bonded within chip stack.

An integrated transformer includes a first and second inductors. The first inductor includes a first and second windings. The second inductor includes a third and fourth windings. The first, second, third and fourth windings have a first, second, third and fourth outer turn, respectively. At least one segment of the first (or second) outer turn substantially overlaps at least one segment of the third (or fourth) outer turn. The first and second outer turns are connected through a first segment and a first trace that cross each other, and the third and fourth outer turns are connected through a second trace and a second segment that cross each other. The first trace and the second segment are on the first metal layer, and the first segment and the second trace are on the second metal layer different from the first metal layer.

A thermal management package for a semiconductor device includes a high dielectric constant material substrate, a high thermal conductivity slug disposed in a first window in the high dielectric constant material substrate and held therein by a first bonding material, an outer substrate formed from a material having a low dielectric constant and having a second window formed therein, the high dielectric constant material substrate disposed in the second window in the low dielectric constant outer substrate and held therein by a second bonding material.

A device includes: a surface mount device carrier configured to be mounted to a metal submount of a transistor package, said surface mount device carrier includes an insulating substrate includes a top surface and a bottom surface and a first pad and a second pad arranged on a top surface of said surface mount device carrier; at least one surface mount device includes a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad; and at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said insulating substrate, where at least one of the first pad and the second pad are configured as wire bond pads.

A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

An integrated circuit package includes a transmission line structure, conductive bonds, a post and a dielectric post. The transmission line structure runs from a printed circuit board (PCB) to an integrated circuit (IC) and includes a center transmission line surrounded by ground and sealed from exposure to air. The conductive bonds connect the transmission line structure to pads on the integrated circuit from where the center transmission line exits the integrated circuit package. The first post is part of the center transmission line where the center transmission line enters the integrated circuit package from the printed circuit board. The dielectric post supports the center transmission line where the center transmission line exits the integrated circuit package to connect to the conductive bonds and compensates part of the conductive bond inductance.

An electronic component package includes a substrate and an electronic component mounted to the substrate, the electronic component including a bond pad. A first antenna terminal is electrically connected to the bond pad, the first antenna terminal being electrically connected to a second antenna terminal of the substrate. A package body encloses the electronic component, the package body having a principal surface. An antenna is formed on the principal surface by applying an electrically conductive coating. An embedded interconnect extends through the package body between the substrate and the principal surface and electrically connects the second antenna terminal to the antenna. Applying an electrically conductive coating to form the antenna is relatively simple thus minimizing the overall package manufacturing cost. Further, the antenna is relatively thin thus minimizing the overall package size.

An apparatus includes a first conductor trace arranged to electrically couple a first complementary signal to provide differential signaling. The first conductor trace includes a first plurality of split traces to conduct the first complementary signal, and a first plurality of tie bars to connect the first split traces.

Devices and methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a silicon die such as an SOI die including a first side and a second side. The silicon die can further include a plurality of vias, with each via configured to provide an electrical connection between the first side and the second side of the silicon die. The RF device can further include at least one RF flip chip mounted on the first side of the silicon die. The silicon die can include, for example, an RF circuit such as a switch circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter.

Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.