A semiconductor device is provided with one or more gate fingers (20) that are provided in an active region on a semiconductor substrate (1), and a source finger (30) and a drain finger (40) that are provided in the active region and arranged alternately to allow each gate finger to be sandwiched between the source and drain fingers. The semiconductor device includes terminal circuit (60) that has inductive impedance at the frequency of a signal input to an input terminal of the one or more gate fingers, and is directly or indirectly connected to the one or more gate fingers at an area being spaced away from a connecting position of the input terminal (21a) of the one or more gate fingers (20).

This semiconductor device is provided with a device substrate in which a semiconductor circuit including two high frequency amplifiers; a cap substrate and a sealing frame of a conductor which forms and air-tightly seals space surrounding an area, in which the semiconductor circuit is formed, between the device substrate and the cap substrate, wherein the sealing frame is configured as a line of a 90-degree hybrid circuit or a line of a rat-race circuit.

An amplifier device includes a substrate, a composite packaged amplifier having a bottom plate and an output plate, a first amplifier and a second amplifier provided on the bottom plate, a combining node that combines an output of the first amplifier with an output of the second amplifier, an output matching circuits provided on the bottom plate, that has a first transmission line provided between the first amplifier and the combining node, and a second transmission line provided between the combining node and the second amplifier, a third transmission line having one transmission line on which the output plate is mounted and other transmission line that connects the one transmission line to the external port, and wirings connecting to one terminal of the output plate and the combining node. A length of the output plate and the other transmission line is equal or less than π/4 radian for a signal.

Power amplifier systems including power amplifier modules (PAMs) and electromagnetic bandgap (EBG) isolation structures are disclosed. In embodiments, the power amplifier system includes a printed circuit board (PCB) and a PAM mounted to the PCB in an inverted orientation. The PCB has a PCB frontside on which a PAM mount region is provided, and radio frequency (RF) input and output bondpads. The PAM includes a topside input/output interface having RF input and output terminals electrically coupled to the RF input and output pads, respectively. The power amplifier system further includes a first EBG isolation structure containing a first grounded EBG cell array, at least a portion of which is located within or beneath the PAM mount region.

A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.

Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

In order to reduce costs as well as to effectively dissipate heat in certain RF circuits, a semiconductor device of the circuit can include one or more active devices such as transistors, diodes, and/or varactors formed of a first semiconductor material system integrated onto (e.g., bonded to) a base substrate formed of a second semiconductor material system that includes other circuit components. The first semiconductor material system can, for example, be the III-V or III-N semiconductor system, and the second semiconductor material system can, for example be silicon.

An RF amplifier includes an amplifier input, a transistor die with a transistor and a transistor input terminal, a fundamental frequency impedance matching circuit coupled between the amplifier input and the transistor input terminal, and a harmonic frequency termination circuit coupled between the transistor input terminal and a ground reference node. The harmonic frequency termination circuit includes a first inductance coupled between the transistor input terminal and a first node, and a tank circuit coupled between the first node and the ground reference node. The tank circuit includes a first capacitance coupled between the first node and the ground reference node, and a second inductance coupled between the first node and the ground reference node. The tank circuit is configured to shunt signal energy at or near a second harmonic frequency, while appearing as an open circuit to signal energy at a fundamental frequency of operation of the RF amplifier.