A package substrate is disclosed. The package substrate includes a die package in the package substrate located at least partially underneath a location of a power delivery interface in a die that is coupled to the surface of the package substrate. Connection terminals are accessible on a surface of the die package to provide connection to the die that is coupled to the surface of the package substrate. Metal-insulator-metal layers inside the die package are coupled to the connection terminals.

A microelectronic assembly comprising a semiconductor structure (e.g., IC chip) and an interposer that is electrically connected to the semiconductor structure and contains a semiconductor material (e.g., silicon interposer) is provided. The assembly also comprises a decoupling capacitor that contains alternating dielectric layers and internal electrode layers, the internal electrode layers containing first internal electrode layers and second internal electrode layers. The capacitor further contains external terminals that are disposed on a first surface of the capacitor and electrically connected to the interposer and external terminals disposed on the second surface of the capacitor that are electrically connected to a circuit board.

The invention is directed to a multilayer ceramic capacitor comprising a top surface and an opposing bottom surface and four side surfaces that extend between the top and bottom surfaces, a main body formed from a plurality of dielectric layers and a plurality of internal electrode layers alternately arranged, and external terminals electrically connected to the internal electrode layers wherein a first external terminal is disposed along the top surface and a second external terminal is disposed along the bottom surface. The internal electrode layer includes a first electrode electrically connected to the first external terminal and a second counter electrode electrically connected to the second external terminal, wherein the first electrode includes a central portion extending from the first external terminal toward the second external terminal and wherein the central portion extends 40% to less than 100% a distance from the first external terminal to the second external terminal.

A receiver circuit includes a plurality of receivers, each of the receivers being associated with a carrier of a plurality of carriers, and a decoupler configured to receive a transmission signal from a transmission channel and output a plurality of divided transmission signals to the plurality of receivers. An equalizer is configured to modify either the transmission signal or one of the divided transmission signals.

A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.

A housing for a high-frequency chip in a radar device for level measurement is provided, including a high-frequency chip having a high-frequency terminal and a supply terminal; horizontal metal layers; vertical metal connecting lines; and an external supply terminal configured to connect the chip to a circuit board of the device, the chip being attached to one of the horizontal metal layers in an electrically conductive manner, and being embedded in a polymer compound, which is located between the horizontal metal layers, the supply terminal being connected to the external supply terminal via at least one of the horizontal metal layers and via at least one of the vertical metal connecting lines, and the high-frequency terminal being connected to an antenna configured to decouple and receive radar waves, via at least one of the horizontal metal layers and/or via at least one of the vertical metal connections.

Vertical capacitors for microelectronics are provided. An example thin capacitor layer can provide one or numerous capacitors to a semiconductor chip or integrated circuit. In an implementation, a thin capacitor layer of 50-100 m thickness may have 5000 vertically disposed capacitor plates per linear centimeter, while occupying only a thin slice of the package. Electrodes for each capacitor plate are accessible at multiple surfaces. Electrode density for very fine pitch interconnects can be in the range of 2-200 m separation between electrodes. A redistribution layer (RDL) may be fabricated on one or both sides of the thin capacitor layer to provide fan-out ball grid arrays that occupy insignificant space. RDLs or through-vias can connect together sets of the interior vertical capacitor plates within a given thin capacitor layer to form various capacitors from the plates to meet the needs of particular chips, dies, integrated circuits, and packages.

Systems and methods for placing capacitors between IC bumps and BGA balls are described. In one embodiment, the method may include placing a ball grid array (BGA) package or integrated circuit (IC) package on a printed circuit board (PCB) of an electronic device, and placing a capacitor between a first BGA ball and a second BGA ball of the BGA package and/or placing a capacitor between a first IC bump and a second IC bump of the IC package to maintain impedance of a power delivery network (PDN) of the BGA package or IC package below a target impedance.

A circuit system having compact decoupling structure, including: a mother board; at least one circuit unit, each having a substrate, a logic-circuit die, a plurality of first metal contacts, and a plurality of second metal contacts, the substrate having a first surface and a second surface, the first metal contacts being formed on the first surface and soldered onto the mother board, the second metal contacts being formed on the logic-circuit die and soldered onto the second surface to form flip-chip pillars, and the flip-chip pillars determining a height of a gap between the die and the substrate; and at least one decoupling unit for providing an AC signals decoupling function for the at least one circuit unit; wherein each of the at least one decoupling unit is placed in the gap of one said circuit unit and includes a mother die and at least one stack-type integrated-passive-device die.

A circuit of tunable differential vias may include a first tunable via circuit configured to couple a first signal of a differential signal pair from a first outer surface of a printed circuit board (PCB) to a second outer surface of the PCB. The circuit may further include a second tunable via circuit configured to couple a second signal of the differential signal pair from the first outer surface of the PCB to the second outer surface of the PCB. The first tunable via circuit may further include a first buried via spatially offset from the second tunable via circuit to cause a predetermined impedance for the first and second signals through the first and second tunable via circuits at an operating frequency.