The invention is directed to a multilayer ceramic capacitor comprising a top surface and an opposing bottom surface and four side surfaces that extend between the top and bottom surfaces, a main body formed from a plurality of dielectric layers and a plurality of internal electrode layers alternately arranged, and external terminals electrically connected to the internal electrode layers wherein a first external terminal is disposed along the top surface and a second external terminal is disposed along the bottom surface. The internal electrode layer includes a first electrode electrically connected to the first external terminal and a second counter electrode electrically connected to the second external terminal, wherein the first electrode includes a central portion extending from the first external terminal toward the second external terminal and wherein the central portion extends 40% to less than 100% a distance from the first external terminal to the second external terminal.

A circuit system having compact decoupling structure, including: a mother board; at least one circuit unit, each having a substrate, a logic-circuit die, a plurality of first metal contacts, and a plurality of second metal contacts, the substrate having a first surface and a second surface, the first metal contacts being formed on the first surface and soldered onto the mother board, the second metal contacts being formed on the logic-circuit die and soldered onto the second surface to form flip-chip pillars, and the flip-chip pillars determining a height of a gap between the die and the substrate; and at least one decoupling unit for providing an AC signals decoupling function for the at least one circuit unit; wherein each of the at least one decoupling unit is placed in the gap of one said circuit unit and includes a mother die and at least one stack-type integrated-passive-device die.

A device including a substrate, an upper capacitor, and a lower capacitor is described. The upper capacitor is mounted on the substrate and includes an upper body and a pillar that extends from the upper body towards the substrate. The lower capacitor includes a lower body that is disposed both lateral to the pillar and at least in part between the upper body and the substrate. Each of the upper capacitor and the lower capacitor is a respective discrete circuit component. Such capacitor stacking configurations facilitate the placement of larger numbers of capacitors in close proximity to microprocessor cores in integrated circuit modules without the need to increase module size.

A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.

Semiconductor packages and a method of forming a semiconductor package are described. The semiconductor package has a foundation layer, a conductive layer formed in the foundation layer, and a magnetic layer formed between the conductive and the foundation layer. The conductive layer and the magnetic layer are coupled to form a low-profile inductor shield. The semiconductor package also has a dielectric layer formed between the magnetic and foundation layer. The foundation layer is mounted between a motherboard and a semiconductor die, where the foundation layer is attached to the motherboard with solder balls. Accordingly, the low-profile inductor shield may include a z-height that is less than a z-height of the solder balls. The low-profile inductor shield may have solder pads that are coupled to the conductive layer. The foundation layer may include at least one of voltage regulator and inductor, where the inductor is located above the low-profile inductor shield.

The present disclosure relates to an electronic device with an integral filtering component. The electronic device includes a semiconductor component, an insulating layer, at least one contact plug, and a filtering component. The insulating layer is disposed on the semiconductor component. The contact plug penetrates through the insulating layer. The filtering component is disposed on the insulating layer and the contact plug. The filtering component includes a bottom electrode, an isolation layer, a top electrode, and a dielectric layer. The bottom electrode is divided into a first segment connected to the contact plug and a second segment separated from the first segment. The isolation layer is disposed on the bottom electrode, the top electrode is disposed in the isolation layer, and the dielectric layer is disposed between the bottom electrode and the top electrode.

The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a 3D metal insulator metal (MIM) capacitor structure with an increased capacitance per unit area in a semiconductor structure. The MIM structure includes a substrate, an oxide layer formed over the substrate, and a first metal layer formed over the oxide layer. The first metal layer includes a plurality of mandrels formed on a surface of the first metal layer. The MIM structure also includes a dielectric layer formed over the first metal layer and the plurality of mandrels, a second metal layer formed over on the dielectric layer, and one or more interconnect structures electrically connected to the first and second metal layers.

Power control and decoupling capacitance arrangements for integrated circuit devices are discussed herein. In one example, an assembly includes a first circuit assembly comprising a first circuit board coupled to an integrated circuit device, wherein the first circuit board is coupled to first surface of a system circuit board. The assembly also includes a second circuit assembly comprising a second circuit board having one or more voltage adjustment units configured to supply at least one input voltage to the integrated circuit device, wherein the second circuit board is coupled to a second surface of the system circuit board and positioned at least partially under a footprint of the integrated circuit device with respect to the system circuit board.

Decoupling capacitance arrangements for integrated circuit devices are discussed herein. In one example, an assembly includes a first circuit assembly comprising a first circuit board coupled to an integrated circuit device, where the first circuit board is coupled to first surface of a system circuit board. The assembly includes a second circuit assembly comprising a second circuit board having decoupling capacitance for the integrated circuit device, where the second circuit board is coupled to a second surface of the system circuit board and positioned at least partially under a footprint of the integrated circuit device with respect to the system circuit board.

A semiconductor device includes a substrate that includes a first region and a second region; a switching transistor on the first region of the substrate, an interlayer dielectric layer that covers the switching transistor and is on the second region of the substrate, a cell contact that penetrates the interlayer dielectric layer on the first region of the substrate and is in contact with the switching transistor, and a first dummy contact, a second dummy contact, and a third dummy contact that penetrate the interlayer dielectric layer on the second region of the substrate in a vertical direction and adjacent to each other in a first horizontal direction. The first and second dummy contacts constitute opposing electrodes of a first decoupling capacitor. The second and third dummy contacts constitute opposing electrodes of a second decoupling capacitor. The first to third dummy contacts are electrically isolated from the substrate.