In an embodiment, a semiconductor device includes a semiconductor body having a first major surface, a second major surface opposing the first major surface and at least one transistor device structure, a source pad and a gate pad arranged on the first major surface, a drain pad and at least one further contact pad coupled to a further device structure. The drain pad and the at least one further contact pad are arranged on the second major surface.

A semiconductor device includes a first metal wiring formed on a semiconductor substrate, a first organic insulating film formed on the first metal wiring, and a second metal wiring formed to cover the first organic insulating film and having a via connected to the first metal wiring. The semiconductor device further includes a second organic insulating film formed on the first organic insulating film and having an opening to expose the second metal wiring, a bump formed on an exposed portion of the second metal wiring in the opening, and a tunnel portion formed in contact with the second metal wiring or the first organic insulating film. The tunnel portion overlaps with the second metal wiring in planar view.

A semiconductor device includes a first metal wiring formed on a semiconductor substrate, a first organic insulating film formed on the first metal wiring, and a second metal wiring formed to cover the first organic insulating film and having a via connected to the first metal wiring. The semiconductor device further includes a second organic insulating film formed on the first organic insulating film and having an opening to expose the second metal wiring, a bump formed on an exposed portion of the second metal wiring in the opening, and a tunnel portion formed in contact with the second metal wiring or the first organic insulating film. The tunnel portion overlaps with the second metal wiring in planar view.

A semiconductor device assembly includes a semiconductor die, a substrate, and a spacer directly coupled to the substrate. The spacer includes a flexible main body and a support structure embedded in the flexible main body, wherein the support structure has a higher stiffness than the flexible main body. The spacer carries the semiconductor die. The flexible main body of the spacer mitigates the effects of thermomechanical stress, for example caused by a mismatch between the coefficient of thermal expansion of the semiconductor die and the substrate. The embedded support structure provides strength needed to support the semiconductor die during assembly.

A semiconductor device assembly includes a semiconductor die, a substrate, and a spacer directly coupled to the substrate. The spacer includes a flexible main body and a support structure embedded in the flexible main body, wherein the support structure has a higher stiffness than the flexible main body. The spacer carries the semiconductor die. The flexible main body of the spacer mitigates the effects of thermomechanical stress, for example caused by a mismatch between the coefficient of thermal expansion of the semiconductor die and the substrate. The embedded support structure provides strength needed to support the semiconductor die during assembly.

A semiconductor device and method of manufacture are presented in which a first pad and a second pad are formed adjacent to each other. A first set of dummy pads is manufactured between the first pad and the second pad and bonding pads are formed in electrical connection to the first pad and the second pad.