A package structure and method of forming the same are provided. The package structure includes a die, a redistribution structure and a conductive pad. The redistribution structure is disposed on and electrically connected to the die. The redistribution structure includes a dielectric film, a conductive line, an adhesive layer and a conductive via. The dielectric film has a first surface and a second surface opposite to each other. The conductive line and the adhesive layer are located between the first surface of the dielectric film and the die. The conductive line is electrically connected to the die, and the adhesive layer laterally surrounds the conductive line. The conductive via penetrates through the dielectric film and the adhesive layer to electrically connect to the conductive line. The conductive pad is electrically connected to the die through the redistribution structure.

A package structure and method of forming the same are provided. The package structure includes a die, a redistribution structure and a conductive pad. The redistribution structure is disposed on and electrically connected to the die. The redistribution structure includes a dielectric film, a conductive line, an adhesive layer and a conductive via. The dielectric film has a first surface and a second surface opposite to each other. The conductive line and the adhesive layer are located between the first surface of the dielectric film and the die. The conductive line is electrically connected to the die, and the adhesive layer laterally surrounds the conductive line. The conductive via penetrates through the dielectric film and the adhesive layer to electrically connect to the conductive line. The conductive pad is electrically connected to the die through the redistribution structure.

A first mask and a second mask are sequentially provided to perform a multi-step exposure and development processes. Through proper overlay design of the first mask and the second mask, conductive wirings having acceptable overlay offset are formed.

Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.

Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.

In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

A package structure and method of forming the same are provided. The package structure includes a die, a redistribution structure and a conductive pad. The redistribution structure is disposed on and electrically connected to the die. The redistribution structure includes a dielectric film, a conductive line, an adhesive layer and a conductive via. The dielectric film has a first surface and a second surface opposite to each other. The conductive line and the adhesive layer are located between the first surface of the dielectric film and the die. The conductive line is electrically connected to the die, and the adhesive layer laterally surrounds the conductive line. The conductive via penetrates through the dielectric film and the adhesive layer to electrically connect to the conductive line. The conductive pad is electrically connected to the die through the redistribution structure.

A package structure and method of forming the same are provided. The package structure includes a die, a redistribution structure and a conductive pad. The redistribution structure is disposed on and electrically connected to the die. The redistribution structure includes a dielectric film, a conductive line, an adhesive layer and a conductive via. The dielectric film has a first surface and a second surface opposite to each other. The conductive line and the adhesive layer are located between the first surface of the dielectric film and the die. The conductive line is electrically connected to the die, and the adhesive layer laterally surrounds the conductive line. The conductive via penetrates through the dielectric film and the adhesive layer to electrically connect to the conductive line. The conductive pad is electrically connected to the die through the redistribution structure.

Implementations of semiconductor packages may include a die including a first side and a second side opposing the first side, the second side of the die coupled to a layer, a first end of a plurality of wires each bonded to the first side of the die, a mold compound encapsulating the die and the plurality of wires, and a second end of the plurality of wires each directly bonded to one of a plurality of bumps, wherein a surface of the layer is exposed through the mold compound.

Semiconductor packages including active die stacks, and methods of fabricating such semiconductor packages, are described. In an example, a semiconductor package includes an active die having a top surface covered by a molding compound, and a bonding pad attached to only one interconnect wire. A method of fabricating the semiconductor package includes bridging a pair of dies stacks by the interconnect wire, and dividing the interconnect wire to form separate wire segments attached to respective die stacks.