A connector may include: a first substrate having a top surface, a bottom surface opposite to the top surface of the top substrate and a side surface joining an edge of the top surface of the first substrate and joining an edge of the bottom surface of the first substrate; a second substrate having a top surface, a bottom surface opposite to the top surface of the second substrate and a side surface joining an edge of the top surface of the second substrate and joining an edge of the bottom surface of the second substrate, wherein the side surface of the second substrate faces the side surface of the first substrate, wherein the top surfaces of the first and second substrates are coplanar with each other at a top of the connector and the bottom surfaces of the first and second substrates are coplanar with each other at a bottom of the connector; and a plurality of metal traces between, in a first horizontal direction, the side surfaces of the first and second substrates, wherein each of the plurality of metal traces has a top end at the top of the connector and a bottom end at the bottom of the connector.

An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.

Various embodiments may provide a method of forming an electrical connection structure. The method may include forming a cavity on a front surface of a substrate, the substrate including an electrically conductive pad, by etching through the electrically conductive pad. The method may also include forming one or more dielectric liner layers covering an inner surface of the cavity. The method may further include forming a via hole extending from the cavity by etching through the one or more dielectric liner layers, forming one or more further dielectric liner layers covering an inner surface of the via hole. The method may additionally include depositing a suitable electrically conductive material into the cavity and the via hole to form a conductive via having a first portion in the cavity and a second portion in the via hole, a diameter of the first portion different from a diameter of the second portion.

A package structure and method of forming the same are provided. The package structure includes a die, a via, an encapsulant, an adhesion promoter layer, and a polymer layer. The via is laterally aside the die. The encapsulant laterally encapsulates the die and the via. The adhesion promoter layer is sandwiched between the via and the encapsulant. The encapsulant comprises a portion aside the via and under the adhesion promoter layer, and the portion of the encapsulant is sandwiched between the adhesion promoter layer and the polymer layer.

A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.

Systems, devices and methods of manufacturing a system on silicon wafer (SoSW) device and package are described herein. A plurality of functional dies is formed in a silicon wafer. Different sets of masks are used to form different types of the functional dies in the silicon wafer. A first redistribution structure is formed over the silicon wafer and provides local interconnects between adjacent dies of the same type and/or of different types. A second redistribution structure may be formed over the first redistribution layer and provides semi-global and/or global interconnects between non-adjacent dies of the same type and/or of different types. An optional backside redistribution structure may be formed over a second side of the silicon wafer opposite the first redistribution layer. The optional backside redistribution structure may provide backside interconnects between functional dies of different types.

A package structure includes a first die, a second die, a bonding die, a gap fill structure and conductive vias. The bonding die includes a bonding dielectric layer and bonding pads. The bonding dielectric layer is bonded to a first dielectric layer of the first die and a second dielectric layer of the second die. The bonding pads are embedded in the bonding dielectric layer and electrically bonded to a first conductive pad of the first die and a second conductive pad of the second die. The gap fill structure is disposed on the first die and the second die, and laterally surrounds the bonding die. The conductive vias penetrates through the gap fill structure to electrically connect to the first die and the second die.

A semiconductor device includes, a semiconductor element, a wiring member arranged to sandwich the semiconductor element, a sealing resin body. The semiconductor element has an SBD formed thereon with a base material of SiC which is a wide band gap semiconductor. The semiconductor element has two main electrodes on both surfaces. The wiring member includes (i) a heat sink electrically connected to a first main electrode and (ii) a heat sink and a terminal electrically connected to a second main electrode. The semiconductor device further includes an insulator. The insulator has a non-conducting element made of silicon. The insulator has joints on both of two surfaces for mechanical connection of the heat sinks.

Provided is a semiconductor device, an imaging device, and a manufacturing apparatus, capable of providing a semiconductor substrate maintaining and improving insulating performance. A through hole that penetrates the semiconductor substrate, an electrode at the center of the through hole, and a space around the electrode are included. The through hole also penetrates an insulating film formed on the semiconductor substrate. A barrier metal is further included around the electrode. An insulating film is further included in the semiconductor substrate and the space. The semiconductor device has a multilayer structure, and the electrode connects wirings formed in different layers to each other.

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.