Provided is a semiconductor package including a semiconductor stack including a first lower chip, a second lower chip, a gap filler disposed between the first lower chip and the second lower chip, and a first upper chip disposed on an upper surface of the first lower chip, an upper surface of the second lower chip, and an upper surface of the gap filler, the first lower chip includes first upper surface pads and a first upper surface dielectric layer, the second lower chip includes second upper surface pads and a second upper surface dielectric layer, the first upper chip includes lower surface pads and a lower surface dielectric layer, and an area of an upper surface of each of the second upper surface pads is greater than an area of a lower surface of each of the lower surface pads.

A package includes an interposer, which includes a first substrate free from through-vias therein, redistribution lines over the first substrate, and a first plurality of connectors over and electrically coupled to the redistribution lines. A first die is over and bonded to the first plurality of connectors. The first die includes a second substrate, and through-vias in the second substrate. A second die is over and bonded to the plurality of connectors. The first die and the second die are electrically coupled to each other through the redistribution lines. A second plurality of connectors is over the first die and the second die. The second plurality of connectors is electrically coupled to the first plurality of connectors through the through-vias in the second substrate.

In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

The present disclosure relates to a semiconductor package including a first semiconductor chip having a first surface on which first connection pads are disposed, and a second surface on which second connection pads are disposed, and including through-vias connected to the second connection pads; a connection structure disposed on the first surface and including a first redistribution layer; a first redistribution disposed on the second surface; and a second semiconductor chip disposed on the connection structure. The first connection pads are connected to a signal pattern of the first redistribution layer, and the second connection pads are connected to at least one of a power pattern and a ground pattern of the second redistribution layer.

Provided is a display substrate, which includes a base substrate, a circuit structure layer disposed on the base substrate, multiple ultrasonic sensing elements and multiple micro light-emitting elements. The multiple ultrasonic sensing elements are disposed on a side of the circuit structure layer away from the base substrate, and are electrically connected to the circuit structure layer, and the multiple light-emitting elements are disposed on the side of the circuit structure layer away from the base substrate, and are electrically connected to the circuit structure layer. An orthographic projection of the multiple ultrasonic sensing elements on the base substrate does not overlap with an orthographic projection of the multiple micro light-emitting elements on the base substrate.

A fabrication method of a semiconductor package includes the steps of: forming a release layer on a carrier having concave portions; disposing chips on the release layer in the concave portions of the carrier; forming an encapsulant on the chips and the release layer; forming a bonding layer on the encapsulant; removing the release layer and the carrier so as to expose the active surfaces of the chips; and forming a circuit structure on the encapsulant and the chips. Since the release layer is only slightly adhesive to the chips and the encapsulant, the present invention avoids warpage of the overall structure during a thermal cycle caused by incompatible CTEs.

A manufacturing method of a wafer level package structure includes the following steps. A chip is disposed on a supporting board, wherein the chip includes an active surface and a back surface opposite to the active surface, and a plurality of pads on the active surface, and the back surface of the chip is adhered to the supporting board through a die attach film (DAF). A molding is disposed on the supporting board to perform a wafer level exposed die molding procedure on the chip, wherein the molding surrounds the chip, and the pads of the chip are exposed out of the molding. A redistribution layer (RDL) is formed on the active surface of the chip, wherein the RDL is electrically connected to the pads. The supporting board and the DAF are removed from the chip.

Disclosed is a fan-out back-to-back chip stacked package, comprising a back-to-back stack of a first chip and a second chip, an encapsulant, a plurality of vias disposed in the encapsulant, a first redistribution layer and a second redistribution layer. The encapsulant encapsulates the sides of the first chip and the sides of the second chip simultaneously and has a thickness not greater than the chip stacked height to expose a first active surface of the first chip and a second active surface of the second chip. The encapsulant has a first peripheral surface expanding from the first active surface and a second peripheral surface expanding from the second active surface. The first redistribution layer is formed on the first active surface and extended onto the first peripheral surface to electrically connect the first chip to the vias in the encapsulant. The second RDL is formed on the second active surface and extended onto the second peripheral surface to electrically connect the second chip to the vias in the encapsulant. Accordingly, the structure realizes a thin package configuration of multi-chip back-to-back stacking to reduce package warpage.

A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.

A component carrier includes a stack having at least one electrically insulating layer structure and a plurality of electrically conductive layer structures, and a component embedded in the stack and having an array of pads on a main surface of the component. A first electrically conductive connection structure of the electrically conductive layer structures electrically connects a first pad of the pads up to a first wiring plane, and a second electrically conductive connection structure of the electrically conductive layer structures electrically connects a second pad of the pads up to a second wiring plane being different from the first wiring plane.