A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having a connection pad disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip, wherein the first interconnection member and the second interconnection member include, respectively, redistribution layers electrically connected to the connection pad, the semiconductor chip includes a passivation layer having an opening exposing at least a portion of the connection pad, the redistribution layer of the second interconnection member is connected to the connection pad through a via, and the via covers at least a portion of the passivation layer.

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface and an inactive surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip, wherein the first interconnection member and the second interconnection member each include a redistribution layer electrically connected to the connection pads, the semiconductor chip includes a passivation layer having openings exposing at least portions of the connection pads, the redistribution layer of the second interconnection member is connected to the connection pad through a via, a metal layer is disposed between the connection pad and the via, and the metal layer covers at least a portion of the connection pad.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A fan-out semiconductor package includes a first connection member having a through hole, a semiconductor chip in the through hole, having an active surface with a connection pad and an inactive surface on an opposing side. An encapsulant encapsulates at least a portion of the first connection member and the semiconductor chip. A second connection member is on the first connection member and the semiconductor chip. The first connection member and the second connection member each include a redistribution layer electrically connected to a connection pad of the semiconductor chip. The interface between the second connection member and the encapsulant is located on a different level from the level of the interface between the second connection member and a redistribution layer of the first connection member or the level of the interface between the second connection member and a connection pad of the semiconductor chip.

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member. The first interconnection member and the second interconnection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, the second interconnection member includes an insulating layer on which the redistribution layer of the second interconnection member is disposed, and the passivation layer has a modulus of elasticity greater than that of the insulating layer of the second interconnection member.

Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes forming a dam structure on dies proximate edge regions of the dies. A molding material is disposed around the dies, and a top portion of the molding material and a top portion of the dam structure are removed.

Fan-out panel level packages (FOPLPs) comprising warpage control structures and techniques of formation are described. An FOPLP may comprise one or more redistribution layers; a semiconductor die on the one or more redistribution layers; one or more warpage control structures adjacently located next to the semiconductor die; and a mold compound encapsulating the semiconductor die and the one or more warpage control structures on the one or more redistribution layers. The FOPLP can be coupled a board (e.g., a printed circuit board, etc.). The warpage control structures can assist with minimizing or eliminating unwanted warpage, which can occur during or after formation of an FOPLP or a packaged system. In this way, the warpage control structures can assist with reducing costs associated with semiconductor packaging and/or manufacturing of an FOPLP or a packaged system.

A semiconductor package includes a semiconductor die having an active surface and a bottom surface opposite to the active surface; a plurality of bond pads distributed on the active surface of the semiconductor die; an encapsulant covering the active surface of the semiconductor die, wherein the encapsulant comprises a bottom surface that is flush with the bottom surface of the semiconductor; and a plurality of printed interconnect features embedded in the encapsulant for electrically connecting the plurality of bond pads. Each of the printed interconnect features comprises a conductive wire and a conductive pad being integral with the conductive wire.

A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

An object of the present invention is to provide a circular support substrate that allows for positioning based solely on its outer periphery shape. As a means for solving the problems, a circular support substrate is provided that has at least three chords along its circumference, wherein the chords are provided at positions where they do not run linearly symmetrical to the straight line passing through the center axis of the circular support substrate.