Various embodiments may provide a method of forming an electrical connection structure. The method may include forming a cavity on a front surface of a substrate, the substrate including an electrically conductive pad, by etching through the electrically conductive pad. The method may also include forming one or more dielectric liner layers covering an inner surface of the cavity. The method may further include forming a via hole extending from the cavity by etching through the one or more dielectric liner layers, forming one or more further dielectric liner layers covering an inner surface of the via hole. The method may additionally include depositing a suitable electrically conductive material into the cavity and the via hole to form a conductive via having a first portion in the cavity and a second portion in the via hole, a diameter of the first portion different from a diameter of the second portion.

A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

A method of forming a redistribution structure includes providing a dielectric layer. The dielectric layer is patterned to form a plurality of via openings. A seed layer is formed on the dielectric layer and filling in the plurality of via openings. A patterned conductive layer is formed a on the seed layer, wherein a portion of the seed layer is exposed by the patterned conductive layer. The portion of the seed layer is removed by using an etching solution, thereby forming a plurality of conductive lines and a plurality of vias. During the removing the portion of the seed layer, an etch rate of the patterned conductive layer is less than an etch rate of the seed layer.

A semiconductor device includes a chip body; a passivation layer on the chip body; a lower dielectric layer on the passivation layer; a first re-distribution pad on the lower dielectric layer; an upper dielectric layer on the lower dielectric layer, the upper dielectric layer having a groove that exposes an upper surface of the first re-distribution pad; and a second re-distribution pad on the upper dielectric layer. An upper surface of the second re-distribution pad is positioned at a higher level than the upper surface of the first re-distribution pad.

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

In some embodiments, an integrated chip (IC) is provided. The IC includes a metallization structure disposed over a semiconductor substrate, where the metallization structure includes an interconnect structure disposed in an interlayer dielectric (ILD) structure. A passivation layer is disposed over the metallization structure, where an upper surface of the interconnect structure is at least partially disposed between opposite inner sidewalls of the passivation layer. A sidewall spacer is disposed along the opposite inner sidewalls of the passivation layer, where the sidewall spacer has rounded sidewalls. A conductive structure is disposed on the passivation layer, the rounded sidewalls of the sidewall spacer, and the upper surface of the interconnect structure.

There is a problem that an area of a principal current cell is reduced by an area of a bonding pad wiring layer for a sub-cell. A source electrode 9b of a current detection cell 22 is electrically connected to a bonding pad wiring layer 12 formed on an interlayer insulating film 10 via a wiring layer contact 11. The bonding pad wiring layer 12 is formed with respect to a source electrode 9a of a principal current cell 21 so as to cover a part of the source electrode 9a via the interlayer insulating film 10. As a result, the source electrode 9b is miniaturized, and a size of the source electrode 9b is made substantially equal to a size of the current detection cell 22. Therefore, the current detection cell 22 and the principal current cell 21 are disposed close to each other.

A system-in-package includes an interposer substrate having a first side and a second side opposite the first side, and a redistribution layer disposed on the first side. The redistribution layer includes a plurality of contact pads and a plurality of interconnections disposed on the first side. The plurality of interconnections is electrically connected to a plurality of terminals disposed on the second side opposite the first side. A first semiconductor die is disposed on the first side and electrically coupled to a first of the plurality of contact pads and a first of the plurality of interconnections disposed on the first side of the interposer substrate. A second semiconductor die is disposed on the first side. The second semiconductor die is electrically coupled to a second of the plurality of contact pads and a second of the plurality of interconnections disposed on the first side of the interposer substrate.

A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

An IC package including an integrated circuit die having a major surface and one or more solder bumps located on the major surface in at least one corner region of the major surface and a substrate having a surface, the surface including bump pads thereon. The major surface of the integrated circuit die faces the substrate surface, the one or more solder bumps are bonded to individual ones of the bump pads to thereby form a bond joint, the major surface of the integrated circuit die has a footprint area of at least about 400 mm.sup.2. A ratio of a coefficient of thermal expansion of the substrate (CTE.sub.sub) to a coefficient of thermal expansion of the integrated circuit die (CTE.sub.die) is at least about 3:1. A method of manufacturing an IC package is also disclosed.