A semiconductor device includes a first insulating layer, a first bonding pad in the first insulating layer, a second insulating layer in contact with the first insulating layer, and a second bonding pad in the second insulating layer. The first bonding pad includes a first conductive layer and a first barrier layer surrounding the first conductive layer, and the second bonding pad includes a second conductive layer and a second barrier layer surrounding the second conductive layer. The second barrier layer is in contact with the first conductive layer. The second conductive layer is spaced apart from the first conductive layer. The first conductive layer includes a metal material which is different from a metal material included in the second conductive layer. The first and second barrier layers each include at least one of titanium and tantalum.

A semiconductor packaging apparatus and methods of manufacturing semiconductor devices using the same. The semiconductor packaging apparatus includes a process unit, and a controller associated with the process unit. The process unit includes a bonding part that bonds a semiconductor substrate and a carrier substrate to each other to form a bonded substrate, a cooling part that cools the bonded substrate, and a detection part in the cooling part and configured to detect a defect of the bonded substrate. The controller is configured to control the process unit using data obtained from the detection part.

A substrate debonding apparatus configured to separate a support substrate attached to a first surface of a device substrate by an adhesive layer, the substrate debonding apparatus including a substrate chuck configured to support a second surface of the device substrate, the second surface being opposite to the first surface of the device substrate; a light irradiator configured to irradiate light to an inside of the adhesive layer; and a mask between the substrate chuck and the light irradiator, the mask including an opening through which an upper portion of the support substrate is exposed, and a first cooling passage or a second cooling passage, the first cooling passage being configured to provide a path in which a coolant is flowable, the second cooling passage being configured to provide a path in which air is flowable and to provide part of the air to a central portion of the opening.

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first plurality of interconnects within a first inter-level dielectric (ILD) structure disposed along a first side of a first substrate. A conductive pad is arranged along a second side of the first substrate. A first through-substrate-via (TSV) physically contacts an interconnect of the first plurality of interconnects and a first surface of the conductive pad. A second plurality of interconnects are within a second ILD structure disposed on a second substrate. A second TSV extends from an interconnect of the second plurality of interconnects to through the second substrate. A conductive bump is arranged on a second surface of the conductive pad opposing the first surface. The second TSV has a greater width than the first TSV.

A die includes a semiconductor layer, an electrical contact on a first side of the semiconductor layer, a backside electrical contact layer on second side of the semiconductor layer. The die further includes a zinc layer over at least one of the electrical contact or the backside electrical contact layer of the die, and a conversion coating over the zinc layer. The conversion coating includes at least one of zirconium and vanadium. As part of an embedded die package including the die, at least a portion of the conversion coating may adjacent to an electrically insulating substrate of the embedded die package.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

Devices and techniques include process steps for preparing various microelectronic components for bonding, such as for direct bonding without adhesive. The processes include providing a first bonding surface on a first surface of the microelectronic components, bonding a handle to the prepared first bonding surface, and processing a second surface of the microelectronic components while the microelectronic components are gripped at the handle. In some embodiments, the processes include removing the handle from the first bonding surface, and directly bonding the microelectronic components at the first bonding surface to other microelectronic components.

A semiconductor package including a semiconductor chip having a chip pad thereon; a first insulating layer; a redistribution line pattern on the first insulating layer; a redistribution via pattern through the first insulating layer to connect the chip pad to the redistribution line pattern; a second insulating layer covering the redistribution line pattern and including a first part having a first thickness and a second part having a second thickness. the second part being inward relative to the first part; a first conductive pillar through the first part and connected to the redistribution line pattern; a second conductive pillar through the second part and connected to the redistribution line pattern; a first connection pad on the first conductive pillar; a second connection pad on the second conductive pillar; a first connection terminal contacting the first connection pad; and a second connection terminal contacting the second connection pad.

A fan-out wafer level package includes a semiconductor die with a redistribution layer on a sidewall of the semiconductor die. A redistribution layer positioned over the die includes an extended portion that extends along the sidewall. The semiconductor die is encapsulated in a molding compound layer. The molding compound layer is positioned between the extended portion of the redistribution layer and the sidewall of the semiconductor die. Solder contacts, for electrically connecting the semiconductor device to an electronic circuit board, are positioned on the redistribution layer. The solder contacts and the sidewall of the redistribution layer can provide electrical contact on two different locations. Accordingly, the package can be used to improve interconnectivity by providing vertical and horizontal connections.

A package includes a first die that includes a first metallization layer, one or more first bond pad vias on the first metallization layer, wherein a first barrier layer extends across the first metallization layer between each first bond pad via and the first metallization layer, and one or more first bond pads on the one or more first bond pad vias, wherein a second barrier layer extends across each first bond pad via between a first bond pad and the first bond pad via, and a second die including one or more second bond pads, wherein a second bond pad is bonded to a first bond pad of the first die.