A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.

Semiconductor dies having interconnect structures formed thereon, and associated systems and methods, are disclosed herein. In one embodiment, an interconnect structure includes a conductive material electrically coupled to an electrically conductive contact of a semiconductor die. The conductive material includes a first portion vertically aligned with the conductive contact, and a second portion that extends laterally away from the conductive contact. A solder material is disposed on the second portion of the interconnect structure such that the solder material is at least partially laterally offset from the conductive contact of the semiconductor die. In some embodiments, an interconnect structure can further include a containment layer that prevents wicking or other undesirable movement of the solder material during a reflow process.

An array substrate includes a device array, a bonding pad, and at least one support structure. The bonding pad is located in a bonding area and is electrically connected to the device array. A horizontal distance between the at least one support structure and the bonding pad is between 5 m and 1000 m.

An electronic device that includes a semiconductor substrate and a conductive structure disposed over the semiconductor substrate. An insulator layer overlies the semiconductor substrate and includes a tapered opening that overlies a portion of the conductive structure. A flanged conductive column that includes a base portion is disposed in the tapered opening and is coupled to the portion of the conductive structure. The flanged conductive column further includes a flanged portion that is configured to be exposed to provide a conductive contact to the electronic device.

Semiconductor dies having interconnect structures formed thereon, and associated systems and methods, are disclosed herein. In one embodiment, an interconnect structure includes a conductive material electrically coupled to an electrically conductive contact of a semiconductor die. The conductive material includes a first portion vertically aligned with the conductive contact, and a second portion that extends laterally away from the conductive contact. A solder material is disposed on the second portion of the interconnect structure such that the solder material is at least partially laterally offset from the conductive contact of the semiconductor die. In some embodiments, an interconnect structure can further include a containment layer that prevents wicking or other undesirable movement of the solder material during a reflow process.

A semiconductor packaging structure includes a die including a bond pad and a first metal layer structure disposed on the die, the first metal layer structure having a first width, the first metal layer structure including a first metal layer, the first metal layer electrically coupled to the bond pad. The semiconductor packaging structure also includes a first photosensitive material around sides of the first metal layer structure and a second metal layer structure disposed over the first metal layer structure and over a portion of the first photosensitive material, the second metal layer structure electrically coupled to the first metal layer structure, the second metal layer structure having a second width, where the second width is greater than the first width. Additionally, the semiconductor packaging structure includes a second photosensitive material around sides of the second metal layer structure.

A method for manufacturing a semiconductor device includes: partially dicing a substrate wafer arrangement having a plurality of semiconductor chips, wherein the partial dicing forms trenches around the semiconductor chips on a front-side of the substrate wafer arrangement, the depth being greater than a target thickness of a semiconductor chip; filling the trenches with a polymer material to form a polymer structure; first thinning of the back-side to expose portions of the polymer structure; forming a conductive layer on the back-side of the substrate wafer arrangement so that the exposed portions of the polymer structure are covered; second thinning of the back-side to form insular islands of conductive material, the insular islands separated from each other by the polymer structure, each insular island corresponding to a respective one of the semiconductor chips; and dicing the substrate wafer arrangement along the polymer structure.

An array substrate includes a device array, a bonding pad, and at least one support structure. The bonding pad is located in a bonding area and is electrically connected to the device array. A horizontal distance between the at least one support structure and the bonding pad is between 5 m and 1000 m.

Apparatus and associated methods relate to a bond-pad structure having small pad-substrate capacitance for use in high-voltage MOSFETs. The bond-pad structure includes upper and lower polysilicon plates interposed between a metal bonding pad and an underlying semiconductor substrate. The lower polysilicon plate is encapsulated in dielectric materials, thereby rendering it floating. The upper polysilicon plate is conductively coupled to a source of the high-voltage MOSFET. A perimeter of the metal bonding pad is substantially circumscribed, as viewed from a plan view perspective, by a perimeter of the upper polysilicon plate. A perimeter of the upper polysilicon plate is substantially circumscribed, as viewed from the plan view perspective, by a perimeter of the lower polysilicon plate. In some embodiments, the metal bonding pad is conductively coupled to a gate of the high-voltage MOSFET. The pad-substrate capacitance is advantageously made small by this bond-pad structure.

The present invention relates to a method of processing a solder masked carrier with electronic components, comprising the detection of a carrier related reference and the detection of a solder mask dependent reference, which detected reference are used for processing the position of the solder mask on the carrier. The invention also relates to an electronic component as produced with such method.