The present application provides a method for preparing a semiconductor device, include the following steps: forming a source/drain (S/D) region in a semiconductor substrate; forming a bonding pad over the semiconductor substrate; forming a first spacer over a sidewall of the bonding pad; forming a first passivation layer covering the bonding pad and the first spacer; and forming a conductive bump over the first passivation layer, wherein the conductive bump penetrates through the first passivation layer to electrically connect to the bonding pad and the S/D region.

A semiconductor device includes a conductive pattern disposed over a semiconductor substrate, and an interconnect structure disposed over the conductive pattern. The semiconductor device also includes an interconnect liner formed between the interconnect structure and the conductive pattern and surrounding the interconnect structure. The inner sidewall surfaces of the interconnect liner are in direct contact with the interconnect structure, and a maximum distance between outer sidewall surfaces of the interconnect liner is greater than a width of the conductive pattern. The semiconductor device further includes a semiconductor die bonded to the semiconductor substrate. The semiconductor die includes a conductive pad facing the interconnect structure, wherein the conductive pad is electrically connected to the conductive pattern.

The present application provides a semiconductor device and a method for preparing the semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate, and a first spacer disposed over a sidewall of the bonding pad. The semiconductor device also includes a first passivation layer covering the bonding pad and the first spacer, and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain region in the semiconductor substrate through the bonding pad.

The present application provides a semiconductor device and a method for preparing the semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate, and a first spacer disposed over a sidewall of the bonding pad. The semiconductor device also includes a first passivation layer covering the bonding pad and the first spacer, and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain region in the semiconductor substrate through the bonding pad.

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.

Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

Methods of forming connector pad structures, interconnect structures, and structures thereof are disclosed. In some embodiments, a method of forming a connector pad structure includes forming an underball metallization (UBM) pad, and increasing a surface roughness of the UBM pad by exposing the UBM pad to a plasma treatment. A polymer material is formed over a first portion of the UBM pad, leaving a second portion of the UBM pad exposed.