A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes an interconnect structure, a passivation layer and a conductive bump structure. The interconnect structure includes a conductive pad located at a top of the interconnect structure. The passivation layer is disposed on the interconnect structure. The conductive bump structure is disposed on and embedded into the passivation layer and the conductive pad. In a first direction, a first interface between the passivation layer and the conductive pad is located beside and misaligned with a second interface between the conductive bump structure and the conductive pad.

A method for forming a device substrate is provided. The method includes forming a device layer on a semiconductor substrate, forming an interconnect structure over the device layer, and forming a redistribution layer over the interconnect structure. The interconnect structure includes stacked levels of dielectric layers and conductive connectors in the respective dielectric layers. The conductive connectors are divided into groups. The conductive connectors in a first group are connected to one another. The redistribution layer includes a first conductive pad connected to the first group of conductive connectors. The method further includes forming a polymer layer over the redistribution layer, and patterning the polymer layer to form a first opening partially exposing a first conductive pad. In a plan view, a dimension of the first group of conductive connectors is less than a dimension of the first opening.

A method for substrate processing for hybrid bonding that includes forming an aluminum oxide crystallization barrier on a metal contact. In some embodiments, the method may include providing a substrate in preparation for a hybrid bonding process where the substrate has an aluminum oxide (Al.sub.2O.sub.3) bonding layer on an uppermost surface of the substrate and a metal contact is present in the aluminum oxide bonding layer. A crystallization barrier is formed on an uppermost surface of the metal contact. The crystallization barrier disrupts crystallization of the aluminum oxide bonding layer caused by interaction of the aluminum oxide material of the aluminum oxide bonding layer and a metal material of the metal contact during a subsequent annealing process of the hybrid bonding process.

An integrated circuit has corner regions and non-corner regions between the corner regions and includes a semiconductor substrate, conductive pads, passivation layer, post-passivation layer, first conductive posts, and second conductive posts. The conductive pads are disposed over the semiconductor substrate. The passivation layer and the post-passivation layer are sequentially disposed over the conductive pads. The first conductive posts and the second conductive posts are disposed on the post-passivation layer and are electrically connected to the conductive pads. The first conductive posts are disposed in the corner regions and the second conductive posts are disposed in the non-corner regions. Each of the first conductive posts has a body portion and a protruding portion connected to the body portion. A central axis of the body portion of the first conductive post has an offset from a central axis of the protruding portion of the first conductive post.

An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

Various embodiments of the present disclosure are directed towards a semiconductor structure (e.g., an integrated circuit (IC) die) comprising an enhanced cap layer for pad oxidation prevention, as well as a method for forming the IC die. An interconnect pad overlies a substrate at a top of an interconnect structure, and a bond structure overlies and extends from a surface of the interconnect pad. A cap layer and an etch stop layer overlie the surface around the bond structure. Further, the cap layer separates the etch stop layer from the interconnect pad and is soft. Soft may, for example, refer to a hardness less than silicon nitride and/or less than the etch stop layer. Because the cap layer is soft, a probe may be pushed through the cap layer to the interconnect pad for testing without first forming a pad opening exposing the interconnect pad.

A back end of line (BEOL) structure for an integrated circuit chip includes a last metal structure providing a bonding pad. A passivation structure over the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer extends over the passivation structure and is placed in contact with the upper surface of the bonding pad. An insulator material layer covers the conformal nitride layer and includes a second opening that extends through both the insulator material layer and the conformal nitride layer. A foot portion of the conformal nitride layer on the upper surface of the bonding pad is self-aligned with the second opening.

An integrated circuit has corner regions and non-corner regions between the corner regions and includes a semiconductor substrate, conductive pads, passivation layer, post-passivation layer, first conductive posts, and second conductive posts. The conductive pads are disposed over the semiconductor substrate. The passivation layer and the post-passivation layer are sequentially disposed over the conductive pads. The first conductive posts and the second conductive posts are disposed on the post-passivation layer and are electrically connected to the conductive pads. The first conductive posts are disposed in the corner regions and the second conductive posts are disposed in the non-corner regions. Each of the first conductive posts has a body portion and a protruding portion connected to the body portion. A central axis of the body portion of the first conductive post has an offset from a central axis of the protruding portion of the first conductive post.

A display device includes a substrate, a first metal layer on the substrate, a first barrier insulating layer on the first metal layer, an etching control layer on the first barrier insulating layer, a first contact hole passing through the substrate, the first barrier insulating layer, and the etching control layer, a second barrier insulating layer on the etching control layer and including a second contact hole, a fan-out line on the second barrier insulating layer and included in a second metal layer, a pad part inserted into the second contact hole and included in the second metal layer, the pad part integral with the fan-out line, a display layer on the fan-out line, and a flexible film under the substrate and inserted into the first contact hole to be electrically connected to the pad part. The first metal layer includes an etching mark adjacent to the first contact hole.

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor substrate that has a first main surface on one side and a second main surface on the other side, the semiconductor substrate on which a plurality of device forming regions and an intended cutting line that demarcates the plurality of device forming regions are set, a step of forming a first electrode that covers the first main surface in each of the device forming regions, a step of forming a second electrode that covers the second main surface, a step of partially removing the second electrode along the intended cutting line such that the semiconductor substrate is exposed, and forming a removed portion that extends along the intended cutting line, and a step of cutting the semiconductor substrate along the removed portion.