A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

A packaging structure and fabrication method thereof are provided. The method includes: providing semiconductor chips including soldering pads and metal bumps; providing a base plate, wiring structures, input terminals, and output terminals; mounting the semiconductor chips on the front surface of the base plate inversely, such that each metal bump is connected to a corresponding input terminal; forming a bottom filling layer between a functional surface of each semiconductor chip and the front surface of the base plate; forming a first shielding layer covering a non-functional surface and sidewalls of each semiconductor chip, and covering sidewalls of a corresponding bottom filling layer; forming a second shielding layer on each first shielding layer; forming a plastic encapsulation layer on second shielding layers and on a portion of the base plate between semiconductor chips; and forming external contact structures connected to the output terminals.

A packaging structure and fabrication method thereof are provided. The method includes: providing semiconductor chips including soldering pads and metal bumps; providing a base plate, wiring structures, input terminals, and output terminals; mounting the semiconductor chips on the front surface of the base plate inversely, such that each metal bump is connected to a corresponding input terminal; forming a bottom filling layer between a functional surface of each semiconductor chip and the front surface of the base plate; forming a first shielding layer covering a non-functional surface and sidewalls of each semiconductor chip, and covering sidewalls of a corresponding bottom filling layer; forming a second shielding layer on each first shielding layer; forming a plastic encapsulation layer on second shielding layers and on a portion of the base plate between semiconductor chips; and forming external contact structures connected to the output terminals.

Panel level packaging (PLP) with high accuracy and high scalability is disclosed. The PLP employs an alignment carrier with a low coefficient of expansion which is configured with die regions having local die alignment marks. For example, local die alignment marks are provided for each die attach region. Depending on the size of the panel, it may be segmented into blocks, each with die regions with local die alignment marks. In addition, a block includes an alignment die region configured for attaching an alignment die. Linear and non-linear positional errors are reduced due to local die alignment marks and alignment dies. The use of local die alignment marks and alignment dies results in increase yields as well as scaling, thereby improving throughput and decreasing overall costs.

Panel level packaging (PLP) with high accuracy and high scalability is disclosed. The PLP employs an alignment carrier with a low coefficient of expansion which is configured with die regions having local die alignment marks. For example, local die alignment marks are provided for each die attach region. Depending on the size of the panel, it may be segmented into blocks, each with die regions with local die alignment marks. In addition, a block includes an alignment die region configured for attaching an alignment die. Linear and non-linear positional errors are reduced due to local die alignment marks and alignment dies. The use of local die alignment marks and alignment dies results in increase yields as well as scaling, thereby improving throughput and decreasing overall costs.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

A semiconductor device includes: a semiconductor layer formed on a substrate; a first resin layer formed on the semiconductor layer; a second resin layer formed on the first resin layer; a first wiring layer that is formed on the semiconductor layer and is buried in the second resin layer; a second wiring layer that is formed on the second resin layer and the first wiring layer, and is electrically connected to the first wiring layer; and a first inorganic insulating film covering the second resin layer and the second wiring layer, wherein an area of the first wiring layer is larger than an area of the second wiring layer.

A semiconductor device includes: a semiconductor layer formed on a substrate; a first resin layer formed on the semiconductor layer; a second resin layer formed on the first resin layer; a first wiring layer that is formed on the semiconductor layer and is buried in the second resin layer; a second wiring layer that is formed on the second resin layer and the first wiring layer, and is electrically connected to the first wiring layer; and a first inorganic insulating film covering the second resin layer and the second wiring layer, wherein an area of the first wiring layer is larger than an area of the second wiring layer.

A semiconductor device has an encapsulant deposited over a first surface of the semiconductor die and around the semiconductor die. A first insulating layer is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the first insulating layer. An interconnect structure is formed through the encapsulant outside a footprint of the semiconductor die and electrically connected to the conductive layer. The first insulating layer includes an optically transparent or translucent material. The semiconductor die includes a sensor configured to receive an external stimulus passing through the first insulating layer. A second insulating layer is formed over the first surface of the semiconductor die. A conductive via is formed through the first insulating layer outside a footprint of the semiconductor die. A plurality of stacked semiconductor devices is electrically connected through the interconnect structure.