A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

A substrate wafer arrangement includes a substrate layer having a first main side and a second main side opposite the first main side, the first main side being a front-side and the second main side being a back-side, the substrate layer further having a plurality of semiconductor chips. A polymer structure arranged between the plurality of semiconductor chips extends at least from the front-side of the substrate layer to the back-side of the substrate layer and protrudes from a back-side surface of the substrate layer. The polymer structure separates a plurality of insular islands of conductive material, each insular island corresponding to a respective semiconductor chip of the plurality of semiconductor chips. Semiconductor devices produced from the substrate wafer arrangement are also described.

A method for manufacturing a semiconductor device includes: partially dicing a substrate wafer arrangement having a plurality of semiconductor chips, wherein the partial dicing forms trenches around the semiconductor chips on a front-side of the substrate wafer arrangement, the depth being greater than a target thickness of a semiconductor chip; filling the trenches with a polymer material to form a polymer structure; first thinning of the back-side to expose portions of the polymer structure; forming a conductive layer on the back-side of the substrate wafer arrangement so that the exposed portions of the polymer structure are covered; second thinning of the back-side to form insular islands of conductive material, the insular islands separated from each other by the polymer structure, each insular island corresponding to a respective one of the semiconductor chips; and dicing the substrate wafer arrangement along the polymer structure.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

In an embodiment, a semiconductor device includes a semiconductor body having a first major surface, a second major surface opposing the first major surface and at least one transistor device structure, a source pad and a gate pad arranged on the first major surface, a drain pad and at least one further contact pad coupled to a further device structure. The drain pad and the at least one further contact pad are arranged on the second major surface.