In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

A semiconductor chip package includes a substrate; a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad; a conductive paste post printed on the exposed central area of the bond pad; and a bonding wire secured to a top surface of the conductive paste post. The conductive paste post comprises copper paste.

A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package.

This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion

This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion

Provided is a cured film of high elongation, low stress, and high adhesion to metal copper. The cured film is formed by curing a photosensitive resin composition, wherein the photosensitive resin comprises a polyhydroxyamide, and wherein the rate of ring-closure of the polyhydroxyamide in the cured film is not more than 10%.

A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package.

A method of manufacturing an electronic package is provided, in which an electronic element is disposed on a carrier structure; a heat dissipation body of a heat dissipation structure is disposed on the electronic element via a heat dissipation material; the heat dissipation material is cured; supporting legs of the heat dissipation structure are fixed on the carrier structure via a bonding layer; and the bonding layer is cured. Therefore, the heat dissipation structure can be effectively fixed to the heat dissipation material and the bonding layer by completing the arrangements of the heat dissipation material and the bonding layer in stages.

A method includes placing an electronic device on a pliable mating surface on a major surface of a mold such that at least one contact pad on the electronic device presses against the pliable mating surface. The pliable mating surface is on a microstructure in an arrangement of microstructures on the major surface of the mold. A liquid encapsulant material is applied over the electronic device and the major surface of the mold, and then hardened to form a carrier for the electronic device. The mold and the carrier are separated such that the microstructures on the mold form a corresponding arrangement of microchannels in the carrier, and at least one contact pad on the electronic device is exposed in a microchannel in the arrangement of microchannels. A conductive particle-containing liquid is deposited in the microchannel, which directly contacts the contact pad exposed in the microchannel.

Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.