The present disclosure provides a method for preparing a semiconductor device with a composite dielectric structure. The method includes forming a photoresist pattern structure over a first semiconductor die. The method also includes forming a second dielectric layer surrounding the photoresist pattern structure, and removing the photoresist pattern structure to form a first opening in the second dielectric layer. The method further includes forming dielectric spacers along sidewalls of the first opening, and forming an interconnect structure surrounded by the dielectric spacers. In addition, the method includes bonding a second semiconductor die to the second dielectric layer. The second semiconductor die includes a second conductive pad facing the interconnect structure, and the second conductive pad is electrically connected to the first conductive pad of the first semiconductor die through the interconnect structure.

The present application discloses a semiconductor device with slanted conductive layers and a method for fabricating the semiconductor device with the slanted conductive layers. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, first slanted conductive layers positioned in the first insulating layer, and a top conductive layer positioned covering the first slanted conductive layers.

The present application discloses a semiconductor device with slanted conductive layers and a method for fabricating the semiconductor device with the slanted conductive layers. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, first slanted conductive layers positioned in the first insulating layer, and a top conductive layer positioned covering the first slanted conductive layers.

The semiconductor device according to the present invention comprises; a semiconductor element having one surface with a plurality of electrode pads; an electrode structure including a plurality of metal terminals and a sealing resin. The plurality of metal terminals being disposed in a region along a circumference of the one surface. The sealing resin holding the plurality of metal terminals and being disposed on the one surface of the semiconductor element. The electrode structure includes a first surface opposed to the one surface of the semiconductor element, a second surface positioned in an opposite side of the first surface, and a third surface positioned between the first surface and the second surface. Each of the plurality of metal terminals is exposed from the sealing resin in at least a part of the second surface and at least a part of the third surface.

A semiconductor package is provided. The semiconductor package includes a first conductive layer, a plurality of first conductive pads, a plurality of second conductive pads, and a first dielectric layer. The first conductive pads are electrically connected to the first conductive layer. The second conductive pads are electrically disconnected from the first conductive layer.

The present application discloses a method for fabricating a semiconductor device with slanted conductive layers. The method for fabricating a semiconductor device includes providing a substrate, forming a first insulating layer above the substrate, forming first slanted recesses along the first insulating layer, and forming first slanted conductive layers in the first slanted recesses and a top conductive layer covering the first slanted conductive layers.

The present application discloses a method for fabricating a semiconductor device with slanted conductive layers. The method for fabricating a semiconductor device includes providing a substrate, forming a first insulating layer above the substrate, forming first slanted recesses along the first insulating layer, and forming first slanted conductive layers in the first slanted recesses and a top conductive layer covering the first slanted conductive layers.

The present disclosure provides a mothed of method of manufacturing a semiconductor device. The method includes steps of forming a dielectric layer on a substrate; etching the dielectric layer to create a plurality of openings in the dielectric layer; applying a sacrificial layer in at least one of the openings to cover at least a portion of the dielectric layer; forming at least one first conductive feature in the openings where the sacrificial layer is disposed and a plurality of bases in the openings where the sacrificial layer is not disposed; removing the sacrificial layer to form at least one air gap in the dielectric layer; and forming a plurality of protrusions on the bases.

A semiconductor die includes a first pad-level dielectric layer embedding first bonding pads and located over a first substrate. Each of the first bonding pads is located within a respective pad cavity in the first pad-level dielectric layer. Each of the first bonding pads includes a first metallic liner containing a first metallic liner material and contacting a sidewall of the respective pad cavity, a first metallic fill material portion embedded in the first metallic liner, and a metallic electromigration barrier layer contacting the first metallic fill material portion and adjoined to the first metallic liner.

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor component, a re-routing layer, a bonding dielectric and an insulating layer. The re-routing layer is disposed over the semiconductor component and electrically coupled to the semiconductor component. The bonding dielectric is disposed over the semiconductor component to surround a top portion of the re-routing layer. The insulating layer is disposed between the semiconductor component and the bonding dielectric to surround a bottom portion of the re-routing layer.