A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

A discrete three-dimensional (3-D) processor comprises communicatively coupled first and second dice. The first die comprises memory arrays, whereas the second die comprises at least a non-memory circuit and at least an off-die peripheral-circuit component of the memory arrays. The first and second dice have substantially different structures, more particularly back-end-of-line (BEOL) structures.

A discrete three-dimensional (3-D) processor comprises communicatively coupled first and second dice. The first die comprises memory arrays, whereas the second die comprises at least a non-memory circuit and at least an off-die peripheral-circuit component of the memory arrays. The first and second dice have substantially different structures, more particularly back-end-of-line (BEOL) structures.

A cryogenic electronic package includes at least two superconducting and/or conventional metal semiconductor structures. Each of the semiconductor structures includes a substrate and a superconducting trace. Additionally, each of the semiconductor structures includes a passivation layer and one or more under bump metal (UBM) structures. The cryogenic electronic package also includes one or more superconducting and/or conventional metal interconnect structures disposed between selected ones of the at least two superconducting semiconductor structures. The interconnect structures are electrically coupled to respective ones of the UBM structures of the semiconductor structures to form one or more electrical connections between the semiconductor structures. A method of fabricating a cryogenic electronic package is also provided.

A cryogenic electronic package includes at least two superconducting and/or conventional metal semiconductor structures. Each of the semiconductor structures includes a substrate and a superconducting trace. Additionally, each of the semiconductor structures includes a passivation layer and one or more under bump metal (UBM) structures. The cryogenic electronic package also includes one or more superconducting and/or conventional metal interconnect structures disposed between selected ones of the at least two superconducting semiconductor structures. The interconnect structures are electrically coupled to respective ones of the UBM structures of the semiconductor structures to form one or more electrical connections between the semiconductor structures. A method of fabricating a cryogenic electronic package is also provided.

A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.

An integrated circuit (IC) structure includes a substrate, a transistor, an interconnect structure, a plurality of metal lines, an oxide liner, a passivation layer, and a nitride layer. The transistor is on the substrate. The interconnect structure is over the transistor. The metal lines is on the interconnect structure. The oxide liner is over the plurality of metal lines. The passivation layer is over the oxide liner and is more porous than the passivation layer. The nitride layer is over the passivation layer.

Disclosed is a semiconductor package comprising a semiconductor chip, an external connection member on the semiconductor chip, and a dielectric film between the semiconductor chip and the external connection member. The semiconductor chip includes a substrate, a front-end-of-line structure on the substrate, and a back-end-of-line structure on the front-end-of-line structure. The back-end-of-line structure includes metal layers stacked on the front-end-of-line structure, a first dielectric layer on the uppermost metal layer and including a contact hole that vertically overlaps a pad of an uppermost metal layer, a redistribution line on the first dielectric layer and including a contact part in the contact hole and electrically connected to the pad, a pad part, and a line part that electrically connects the contact part to the pad part, and an upper dielectric layer on the redistribution line.

In some examples, a package comprises a die and a redistribution layer coupled to the die. The redistribution layer comprises a metal layer, a brass layer abutting the metal layer, and a polymer layer abutting the brass layer.