An integrated circuit (IC) includes a substrate including circuitry configured for a function, the circuitry including at least one stress sensitive circuit portion, with at least a portion of nodes in the circuitry electrically coupled to bond pads provided by a top metal layer. A metal wall that is ring-shaped is positioned above the top metal layer that is not electrically coupled to the circuitry. The stress sensitive circuit portion is with at least a majority of its area within an inner area of the substrate that is framed by the metal wall to provide a cavity.

Sacrificial pillars for a semiconductor device assembly, and associated methods and systems are disclosed. In one embodiment, a region of a semiconductor die may be identified to include sacrificial pillars that are not connected to bond pads of the semiconductor die, in addition to live conductive pillars connected to the bond pads. The region with the sacrificial pillars, when disposed in proximity to the live conductive pillars, may prevent an areal density of the live conductive pillars from experiencing an abrupt change that may result in intolerable variations in heights of the live conductive pillars. As such, the sacrificial pillars may improve a coplanarity of the live conductive pillars by reducing variations in the heights of the live conductive pillars. Thereafter, the sacrificial pillars may be removed from the semiconductor die.

A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

A semiconductor device including an integrated circuit, a dielectric layer, a plurality of connecting terminals and at least one dummy conductor is provided. The integrated circuit has a plurality of connecting pads, and the dielectric layer is disposed thereon and partially exposes the plurality of the connecting pads by a plurality of openings defined therein. The plurality of the connecting terminals is disposed on the plurality of the connecting pads exposed by the plurality of the openings. The at least one dummy conductor is disposed on the dielectric layer and electrically isolated from the integrated circuit. A substantial topology variation is between the plurality of the connecting terminals and the at least one dummy conductor. A semiconductor package having the semiconductor device is also provided.

Implementations of a silicon-in-insulator (SOI) semiconductor die may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be included through a silicon layer coupled to a insulative layer.

In one instance, a semiconductor package includes a lead frame and a semiconductor die mounted to the lead frame via a plurality of bumps that are shaped or tapered. Each of the plurality of bumps includes a first end connected to the semiconductor die and an opposing, second end connected to the lead frame. The first end has an end surface area A1. The second end has an end surface area A2. The end surface area A1 of the first end is less than the end surface area A2 of the second end. Other aspects are disclosed.

A method for fabricating a copper pillar. The method includes forming a layer of titanium tungsten (TiW) over a semiconductor wafer, forming a layer of zinc (Zn) over the layer of TiW, and forming a copper pillar over the via. In addition, the method includes performing an anneal to diffuse the layer of Zn into the copper pillar. A semiconductor device that includes a layer of TiW coupled to a via of a semiconductor wafer and a copper pillar coupled to the layer of TiW. The copper pillar has interdiffused Zn within its bottom portion. Another method for fabricating a copper pillar includes forming a layer of TiW over a semiconductor wafer, forming a first patterned photoresist, forming a layer of Zn, and then removing the first patterned photoresist. The method further includes forming a second patterned photoresist and forming a copper pillar.

An integrated circuit component includes a semiconductor substrate, conductive pads, a passivation layer and conductive vias. The semiconductor substrate has an active surface. The conductive pads are located on the active surface of the semiconductor substrate and electrically connected to the semiconductor substrate, and the conductive pads each have a contact region and a testing region, where in each of the conductive pads, an edge of the contact region is in contact with an edge of the testing region. The passivation layer is located on the semiconductor substrate, where the conductive pads are located between the semiconductor substrate and the passivation layer, and the testing regions and the contact regions of the conductive pads are exposed by the passivation layer. The conductive vias are respectively located on the contact regions of the conductive pads.

In one example, a method for redistribution layer (RDL) process is described. A substrate is provided. A dielectric layer is deposited on top of the substrate. The dielectric layer is patterned. A barrier and copper seed layer are deposited on top of the dielectric layer. A photoresist layer is applied on top of the barrier and copper seed layer. The photoresist layer is patterned to correspond with the dielectric layer pattern. Copper is electrodepositing in the patterned regions exposed by the photoresist layer. The photoresist layer is removed. The copper and seed barrier are etched.

A method of electroplating a metal into features, having substantially different depths, of a partially fabricated electronic device on a substrate is provided. The method includes adsorbing accelerator into the bottom of recessed features; partially filling the features by a bottom up fill mechanism in an electroplating solution; diffusing leveler into shallow features to decrease the plating rate in shallow features as compared to deep features; and electroplating more metal into the features such that the height of metal in deep features is similar to the height of metal in shallow features.