Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

A semiconductor device including: a semiconductor element; and a first electrode formed on a first surface of the semiconductor element. The first electrode has a stacked structure including a first electroless Ni plating layer. The first electroless Ni plating layer contains nickel (Ni) and phosphorus (P) as a composition. A phosphorus (P) concentration of the first electroless Ni plating layer is 2.5 wt % to 6 wt % inclusive, and a crystallization rate of Ni.sub.3P in the first electroless Ni plating layer is 0% to 20% inclusive.

A semiconductor device including: a semiconductor element; and a first electrode formed on a first surface of the semiconductor element. The first electrode has a stacked structure including a first electroless Ni plating layer. The first electroless Ni plating layer contains nickel (Ni) and phosphorus (P) as a composition. A phosphorus (P) concentration of the first electroless Ni plating layer is 2.5 wt % to 6 wt % inclusive, and a crystallization rate of Ni.sub.3P in the first electroless Ni plating layer is 0% to 20% inclusive.

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

A light emitting apparatus includes a mount substrate; two or more light emitting devices mounted on the mount substrate such that adjacent light emitting devices face each other at lateral surfaces thereof; a light transparent member positioned on upper surfaces of the light emitting devices, the light transparent member having a plate shape and being positioned to receive incident light emitted from the light emitting devices; and a covering member. In a plan view, the light transparent member is larger than each of the light emitting devices. The covering member contains a light reflective material and covers at least a lateral surface of the light transparent member.