Pass-through interconnect structures for microelectronic dies and associated systems and methods are disclosed herein. In one embodiment, a microelectronic die assembly includes a support substrate, a first microelectronic die positioned at least partially over the support substrate, and a second microelectronic die positioned at least partially over the first die. The first die includes a semiconductor substrate, a conductive trace extending over a portion of the semiconductor substrate, a substrate pad between the trace and the portion of the semiconductor substrate, and a through-silicon via (TSV) extending through the trace, the substrate pad, and the portion of the semiconductor substrate. The second die is electrically coupled to the support substrate via a conductive path that includes the TSV.

In a method of forming a three-dimensional semiconductor device, a first chip is provided that includes a first substrate, a first device layer positioned on and covering the first substrate, and a first metallization system positioned on and covering the first device layer, wherein the first device layer includes a plurality of first transistor elements. A second chip is also provided and includes a second substrate, a second device layer positioned on and covering the second substrate, and a second metallization system positioned on and covering the second device layer, wherein the second device layer includes a plurality of second transistor elements. The second chip is attached to the first chip so that a heat spreading material is positioned between the first chip and the second chip and covers at least a portion of the first metallization system.

A semiconductor device includes a chip, at least one element electrically coupled to the chip, an adhesive at least partially covering the at least one element, and a mold material at least partially covering the chip and the adhesive.

A semiconductor device includes a semiconductor layer, a first conductor film, a second conductor film, and a first protective film. The semiconductor layer has a semiconductor element. The first conductor film is formed on an upper surface of the semiconductor layer and is electrically connected to the semiconductor element. The second conductor film is formed on an outer side surface of the semiconductor layer and is electrically connected to the semiconductor element. The first protective film is formed on the first conductor film and has an opening to expose the first conductor film. A height from the upper surface of the semiconductor layer to an upper surface of the second conductor film is equal to or smaller than a height from the upper surface of the semiconductor layer to an upper surface of the first conductor film.

A semiconductor device includes a semiconductor layer, a first conductor film, a second conductor film, and a first protective film. The semiconductor layer has a semiconductor element. The first conductor film is formed on an upper surface of the semiconductor layer and is electrically connected to the semiconductor element. The second conductor film is formed on an outer side surface of the semiconductor layer and is electrically connected to the semiconductor element. The first protective film is formed on the first conductor film and has an opening to expose the first conductor film. A height from the upper surface of the semiconductor layer to an upper surface of the second conductor film is equal to or smaller than a height from the upper surface of the semiconductor layer to an upper surface of the first conductor film.

Methods and apparatuses for transferring heat from stacked microfeature devices are disclosed herein. In one embodiment, a microfeature device assembly comprises a support member having terminals and a first microelectronic die having first external contacts carried by the support member. The first external contacts are operatively coupled to the terminals on the support member. The assembly also includes a second microelectronic die having integrated circuitry and second external contacts electrically coupled to the first external contacts. The first die is between the support member and the second die. The assembly can further include a heat transfer unit between the first die and the second die. The heat transfer unit includes a first heat transfer portion, a second heat transfer portion, and a gap between the first and second heat transfer portions such that the first external contacts and the second external contacts are aligned with the gap.

A thin-film capacitor includes electrode layers stacked in a stacking direction; dielectric layers stacked between the electrode layers; an opening portion that includes a side surface penetrating at least a part of the electrode layers and at least a part of the dielectric layers in the stacking direction from a top side and a bottom surface exposing one of the electrode layers; and a wiring portion disposed in the opening portion to be separated from the side surface of the opening portion, and electrically connected to the electrode layer exposed from the bottom surface of the opening portion. The dielectric layer that is stacked immediately on the electrode layer exposed from the bottom surface of the opening portion among the dielectric layers includes an extension portion extending in the opening portion from the side surface of the opening portion to the wiring portion side.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

A light emitting apparatus includes a mount substrate; two or more light emitting devices mounted on the mount substrate such that adjacent light emitting devices face each other at lateral surfaces thereof; a light transparent member positioned on upper surfaces of the light emitting devices, the light transparent member having a plate shape and being positioned to receive incident light emitted from the light emitting devices; and a covering member. In a plan view, the light transparent member is larger than each of the light emitting devices. The covering member contains a light reflective material and covers at least a lateral surface of the light transparent member.

An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.