A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode. A second insulating layer is formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

According to some embodiments, a semiconductor device includes a semiconductor substrate, a metal portion, a first insulating film, and a second insulating film. The semiconductor substrate has a through-hole extending from a first surface of the semiconductor substrate to a second surface thereof opposite to the first surface. The metal portion is formed in the through-hole. The first insulating film is provided on the second surface of the semiconductor substrate and on a side surface of the through-hole. The second insulating film has a dielectric constant of not more than 6.5 and is provided on a metal portion-side surface of the first insulating film on the side surface of the through-hole of the semiconductor substrate.

According to some embodiments, a semiconductor device includes a semiconductor substrate, a metal portion, a first insulating film, and a second insulating film. The semiconductor substrate has a through-hole extending from a first surface of the semiconductor substrate to a second surface thereof opposite to the first surface. The metal portion is formed in the through-hole. The first insulating film is provided on the second surface of the semiconductor substrate and on a side surface of the through-hole. The second insulating film has a dielectric constant of not more than 6.5 and is provided on a metal portion-side surface of the first insulating film on the side surface of the through-hole of the semiconductor substrate.

Semiconductor device includes: substrate having substrate main surface and substrate rear surface facing opposite sides to each other in first direction, and substrate side surface facing in second direction orthogonal to the first direction; wiring layer having main surface electrode covering a portion of the substrate main surface, and side surface electrode connected to the main surface electrode and covering a portion of the substrate side surface; semiconductor element electrically connected to the main surface electrode and mounted on the substrate to face the substrate main surface; and sealing resin having resin side surface facing in the same direction as the substrate side surface, and covering the semiconductor element and the main surface electrode, wherein the side surface electrode has side exposed surface exposed from the sealing resin and facing in the same direction as the substrate side surface, the side exposed surface being flush with the resin side surface.

Semiconductor device includes: substrate having substrate main surface and substrate rear surface facing opposite sides to each other in first direction, and substrate side surface facing in second direction orthogonal to the first direction; wiring layer having main surface electrode covering a portion of the substrate main surface, and side surface electrode connected to the main surface electrode and covering a portion of the substrate side surface; semiconductor element electrically connected to the main surface electrode and mounted on the substrate to face the substrate main surface; and sealing resin having resin side surface facing in the same direction as the substrate side surface, and covering the semiconductor element and the main surface electrode, wherein the side surface electrode has side exposed surface exposed from the sealing resin and facing in the same direction as the substrate side surface, the side exposed surface being flush with the resin side surface.

A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.

Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.