Semiconductor device includes: substrate having substrate main surface and substrate rear surface facing opposite sides to each other in first direction, and substrate side surface facing in second direction orthogonal to the first direction; wiring layer having main surface electrode covering a portion of the substrate main surface, and side surface electrode connected to the main surface electrode and covering a portion of the substrate side surface; semiconductor element electrically connected to the main surface electrode and mounted on the substrate to face the substrate main surface; and sealing resin having resin side surface facing in the same direction as the substrate side surface, and covering the semiconductor element and the main surface electrode, wherein the side surface electrode has side exposed surface exposed from the sealing resin and facing in the same direction as the substrate side surface, the side exposed surface being flush with the resin side surface.

A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

In an apparatus in which an electrical interconnection interconnects stacked active and passive layers, switches, including at least first, second, third, and fourth switches, on the active layer define a switching network that, when connected to a fly capacitor on the passive layer, define a circuit having a first node connected to the first and second switches and to a first terminal of the fly capacitor, a second node connected to the second switch and third switches, and a third node connected to the third switch and fourth switches and to a second terminal of the fly capacitor.

A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode. A second insulating layer is formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.

Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.

Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.

A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

A semiconductor device is made by providing a substrate, forming a first insulation layer over the substrate, forming a first conductive layer over the first insulation layer, forming a second insulation layer over the first conductive layer, and forming a second conductive layer over the second insulation layer. A portion of the second insulation layer, first conductive layer, and second conductive layer form an integrated passive device (IPD). The IPD can be an inductor, capacitor, or resistor. A plurality of conductive pillars is formed over the second conductive layer. One conductive pillar removes heat from the semiconductor device. A third insulation layer is formed over the IPD and around the plurality of conductive pillars. A shield layer is formed over the IPD, third insulation layer, and conductive pillars. The shield layer is electrically connected to the conductive pillars to shield the IPD from electromagnetic interference.