A method for producing a stack of semiconductor devices and the stacked device obtained thereof are disclosed. In one aspect, the method includes providing a first semiconductor device comprising a dielectric layer with a hole, the hole lined with a metal layer and partially filled with solder material. The method also includes providing a second semiconductor device with a compliant layer having a metal protrusion through the compliant layer, the protrusion capped with a capping layer. The method further includes mounting the devices by landing the metal protrusion in the hole, where the compliant layer is spaced from the dielectric layer. The method includes thereafter reflowing the solder material, thereby bonding the devices such that the compliant layer is contacting the dielectric layer.

A package component includes a surface dielectric layer including a planar top surface, a metal pad in the surface dielectric layer and including a second planar top surface level with the planar top surface, and an air trench on a side of the metal pad. The sidewall of the metal pad is exposed to the air trench.

A groove for air ventilation is formed in a rib with a substantially rectangular ring shape which is provided so as to surround a concave portion provided in a rear surface of a semiconductor chip. The groove is provided in each side or at each corner of the rib so as to traverse the rib from the inner circumference to the outer circumference of the rib. The depth of the groove is equal to or less than the depth of the concave portion provided in the rear surface of the chip. In this way, it is possible to reliably solder a semiconductor device, in which the concave portion is provided in the rear surface of the semiconductor chip and the rib is provided in the outer circumference of the concave portion, to a base substrate, without generating a void in a drain electrode provided in the concave portion.