A semiconductor package structure and a manufacturing method thereof is provided. The semiconductor package includes a first semiconductor die, including a semiconductor substrate and a first interconnect structure disposed on the semiconductor substrate; a second semiconductor die disposed on and electrically connected to the first semiconductor die, including a second semiconductor substrate and a second interconnect structure; a third interconnect structure, where in the second interconnect structure and the third interconnect structure are disposed on opposite sides of the second semiconductor substrate, and wherein the second interconnect structure is between the first interconnect structure and the third interconnect structure.

A semiconductor package includes; a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes; a first substrate, a first bonding pad on a first surface of the first substrate, and a first passivation layer on the first surface of the first substrate exposing at least a portion of the first bonding pad. The second semiconductor chip includes; a second substrate, a second insulation layer on a front surface of the second substrate, a second bonding pad on the second insulation layer, a first alignment key pattern on the second insulation layer, and a second passivation layer on the second insulation layer, covering at least a portion of the first alignment key pattern, and exposing at least a portion of the second bonding pad, wherein the first bonding pad and the second bonding pad are directly bonded, and the first passivation layer and the second passivation layer are directly bonded.

A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

An electrical connection includes a first driving substrate, a first adhesive layer, a first bonding pad a first bonding pad and a second bonding pad. The first driving substrate includes a first substrate and a first dielectric layer on the first substrate. The first adhesive layer is at a sidewall of the first dielectric layer of the first driving substrate. The first bonding pad is on the first substrate of the first driving substrate and in contact with the first adhesive layer, and the first bonding pad includes a plurality of grains, the grains are connected with each other, the grains include [111]-oriented copper grains, and a maximum width of the first bonding pad is equal to or less than 8 microns. The second bonding pad is on the first bonding pad.

A semiconductor device includes an interconnect substrate having a plurality of pads formed on a first surface thereof, a semiconductor chip having a plurality of electrodes formed on a circuit surface thereof, the semiconductor chip being mounted on the interconnect substrate such that the circuit surface faces the first surface, a plurality of bonding members that are made of a same material and that electrically couple the pads and the electrodes, and a resin disposed on the first surface to encapsulate the semiconductor chip and to fill a gap between the circuit surface and the first surface, wherein the semiconductor chip is mounted on the interconnect substrate such that the gap between the circuit surface and the first surface progressively increases from a first side to a second side.

Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

When locating a semiconductor die on a substrate, the die is picked up and carried with a die-holding surface of a bonding tool having a protrusion. The protrusion of the bonding tool is configured to be movable between a retracted position within the die-holding surface and an extended position protruding from the die-holding surface. When the protrusion is located in the extended position, the die is bent when the bonding tool is carrying the die. Thereafter, the bonding tool is moved to flatten the die against the substrate while the substrate urges the protrusion to retract from the extended position towards the retracted position.

A semiconductor package includes: a semiconductor transistor die having an emitter/source contact pad, a drain/collector contact pad, and a gate contact pad; at least two electrical connectors disposed in a symmetrical manner on opposing lateral sides of the semiconductor die and connected with at least one of the contact pads; and an encapsulant embedding the semiconductor transistor die. The two or more electrical connectors extend through the encapsulant and form protruding sections above an upper surface of the encapsulant.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a device region and a seal ring region surrounding the device region. The semiconductor device structure includes a seal ring structure over the seal ring region. The seal ring structure surrounds the device region. The semiconductor device structure includes a bonding film over the seal ring structure and the substrate. The semiconductor device structure includes a bonding pad embedded in the bonding film. The bonding pad overlaps the seal ring structure along an axis perpendicular to a first top surface of the substrate, and a second top surface of the bonding pad is substantially level with a third top surface of the bonding film.