Embodiments are provided for package semiconductor devices, each device including: a low stress pad structure comprising: a dielectric layer, a seed layer having: a center section, and a ring section formed around the center section and over a top surface of the dielectric layer, wherein the ring section of the seed layer includes a set of elongated openings through which a portion of the top surface of the dielectric layer is exposed, and a metal layer having: an inner section formed over a top surface of the center section of the seed layer, and an outer section formed over a top surface of the ring section of the seed layer, wherein a bottom surface of the outer section of the metal layer directly contacts the portion of the top surface of the dielectric layer exposed through the set of elongated openings.

An electronic device includes an electronic unit, a circuit layer and a bonding pad. The electronic unit includes a chip, an insulating layer and a first conductor layer. The insulating layer is disposed on the chip, the insulating layer includes a first opening, and the first conductor layer is disposed in the first opening. The circuit layer is disposed corresponding to the electronic unit, and the circuit layer includes a second opening and a second conductor layer disposed in the second opening. The bonding pad is in contact with the second conductor layer, and the bonding pad is electrically connected to electronic unit. The first conductor layer has a first height, the second conductor layer has a second height, and a ratio of the first height to the second height is greater than or equal to 0.1 and less than or equal to 0.9.

A semiconductor device includes an interconnect substrate having a plurality of pads formed on a first surface thereof, a semiconductor chip having a plurality of electrodes formed on a circuit surface thereof, the semiconductor chip being mounted on the interconnect substrate such that the circuit surface faces the first surface, a plurality of bonding members that are made of a same material and that electrically couple the pads and the electrodes, and a resin disposed on the first surface to encapsulate the semiconductor chip and to fill a gap between the circuit surface and the first surface, wherein the semiconductor chip is mounted on the interconnect substrate such that the gap between the circuit surface and the first surface progressively increases from a first side to a second side.

A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.

A method of manufacturing a semiconductor structure is provided. The method includes providing a substrate, disposing a die over the substrate, forming a molding over the substrate and around the die, disposing a first dielectric layer over the die and the molding, curing the first dielectric layer under a first curing condition, disposing a second dielectric layer over the first dielectric layer, and curing the first dielectric layer and the second dielectric layer under the first curing condition.

The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.

Disclosed herein is a method for forming a semiconductor package. The method includes providing a first releasable chip carrier attached to a conductive layer. A circuit layer is formed on a surface of the conductive layer and a dielectric layer is applied over a surface of the circuit layer. A second releasable chip carrier is attached to a surface of the dielectric layer and the first releasable chip carrier is released from the conductive layer via facilitation of a first activating source. The circuitry of the circuit layer is operationally tested.

Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

A stacked semiconductor device may include a first semiconductor chip including a first bonded surface and a second semiconductor chip including a second bonded surface facing the first bonded surface, the first and second bonded surfaces being bonded to each other. The first semiconductor chip includes a first substrate, at least one first power interconnect disposed between the first substrate and the first bonded surface of the first semiconductor chip and configured to carry a power-supply voltage therethrough, and at least one first power hybrid bonding structure disposed to be in contact with the first power interconnect and configured to extend along the same path as a routing path of the first power interconnect. The second semiconductor chip includes a second substrate, at least one second power interconnect disposed between the second bonded surface and the second substrate and configured to carry a power-supply voltage therethrough, and at least one second power hybrid bonding structure disposed to be in contact with the second power interconnect and the first power hybrid bonding structure and configured to extend along the same path as a routing path of the second power interconnect.