Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.

A microelectronic assembly is provided comprising: a first IC die in a first layer comprising an array of radio frequency (RF) patch antennas on a side opposite to a second layer; a second IC die in the second layer between the first layer and a third layer; and a third IC die in the third layer. The first IC die comprises RF and analog circuitry, the first IC die is part of an array of IC dies having similar size and circuitry as the first IC die, the second layer and the third layer comprise a dielectric with through-dielectric vias (TDVs) therein surrounding the second IC die and the third IC die, respectively, and an interface between adjacent layers comprises interconnects having a pitch of 10 micrometers between adjacent interconnects.

A method includes bonding a first and a second device die to a third device die, forming a plurality of gap-filling layers extending between the first and the second device dies, and performing a first etching process to etch a first dielectric layer in the plurality of gap-filling layers to form an opening. A first etch stop layer in the plurality of gap-filling layers is used to stop the first etching process. The opening is then extended through the first etch stop layer. A second etching process is performed to extend the opening through a second dielectric layer underlying the first etch stop layer. The second etching process stops on a second etch stop layer in the plurality of gap-filling layers. The method further includes extending the opening through the second etch stop layer, and filling the opening with a conductive material to form a through-via.

In one embodiment, a semiconductor device includes a lower interconnect layer including a plurality of lower interconnects, and a plurality of lower pads provided on the lower interconnects. The device further includes a plurality of upper pads provided on the lower pads and being in contact with the lower pads, and an upper interconnect layer including a plurality of upper interconnects provided on the upper pads. The lower pads include a plurality of first pads and a plurality of second pads. The upper pads include a plurality of third pads provided on the second pads and a plurality of fourth pads provided on the first pads, a lower face of each third pad is larger in area than a upper face of each second pad, and a lower face of each fourth pad is smaller in area than a upper face of each first pad.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first logic die including a first through via, an image sensor die hybrid bonded to the first logic die, and a second logic die bonded to the first logic die. A front side of the first logic die facing a front side of the image sensor die. A front side of the second logic die facing a backside of the first logic die. The second logic die comprising a first conductive pad electrically coupled to the first through via.

A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

A semiconductor structure includes a first die, second dies coupled to and on the first die, a dielectric layer on the first die and covering each second die, and through dielectric vias (TDVs) coupled to and on the first die. The first die includes a bonding dielectric layer and bonding features embedded in and leveled with the bonding dielectric layer. An array of second dies is arranged in a first region of the first die. Each second die includes a bonding dielectric layer and a bonding feature embedded in and leveled with the bonding dielectric layer. The bonding dielectric layer and the bonding feature of each second die are respectively bonded to those of the first die. The TDVs are laterally covered by the dielectric layer in a second region of the first die which is connected to the first region and arranged along a periphery of the first die.

A semiconductor device and method of manufacture are provided wherein semiconductor devices are attached over a semiconductor substrate. An opening is formed within metallization layers over the semiconductor substrate and the semiconductor substrate, and an encapsulant is placed to fill the opening. Once the encapsulant is placed, the semiconductor substrate is singulated to separate the devices. By recessing the material of the metallization layers and forming the opening, delamination damage may be reduced or eliminated.

A package device includes a first device die and second device die bonded thereto. When the area of the second device die is less than half the area of the first device die, one or more inactive structures having a semiconductor substrate is also bonded to the first device die so that the combined area of the second device die and the one or more inactive structures is greater than half the area of the first device die.

The present disclosure provides a semiconductor device, a method of manufacturing the semiconductor device and a mothed of method of manufacturing a semiconductor device assembly. The semiconductor device includes a substrate, a bonding dielectric disposed on the substrate, a first conductive feature disposed in the bonding dielectric, an air gap disposed in the bonding dielectric to separate a portion of a periphery of the first conductive feature from the bonding dielectric, and a second conductive feature including a base disposed in the bonding dielectric and a protrusion stacked on the base.