An integrated circuit structure includes a substrate, a metal pad over the substrate, a passivation layer having a portion over the metal pad, and a polymer layer over the passivation layer. A Post-Passivation Interconnect (PPI) has a portion over the polymer layer, wherein the PPI is electrically coupled to the metal pad. The integrated circuit structure further includes a first solder region over and electrically coupled to a portion of the PPI, a second solder region neighboring the first solder region, a first coating material on a surface of the first solder region, and a second coating material on a surface of the second solder region. The first coating material and the second coating material encircle the first solder region and the second solder region, respectively. The first coating material is spaced apart from the second coating material.

A through electrode and a multilayer wiring are provided on a semiconductor substrate, and a bottom layer connection wiring, a lower layer connection wiring, an upper layer connection wiring, and a top layer connection wiring are provided in the multilayer wiring. The through electrode is connected to the bottom layer connection wiring, and a via is arranged at a position other than a position immediately above the through electrode.

Some embodiments of the present disclosure relate to an integrated circuit. The integrated circuit has a first semiconductor die and a second semiconductor die. The first semiconductor die is bonded to the second semiconductor die by one or more bonding structures. A first plurality of support structures are disposed between the first semiconductor die and the second semiconductor die. The first plurality of support structures are spaced apart from the one or more bonding structures. The first plurality of support structures are configured to hold together the first semiconductor die and the second semiconductor die.

A semiconductor structure includes a semiconductor substrate, a pad, a circuit board, a first bump, and a second bump. The pad is disposed on a top surface of the semiconductor substrate. The circuit board includes a contact area corresponding to the pad on the top surface of the semiconductor substrate. The first bump is between the pad on the top surface of the semiconductor substrate and the contact area, wherein the contact area includes a non-metallic surface. The second bump is adjacent the first bump, wherein a first central width of the first bump is larger than a second central width of the second bump.

Incorporating at least one magnetic alignment structure on a microelectronic device and incorporating at least one alignment coil within a microelectronic substrate, wherein the alignment coil may be powered to form a magnetic field to attract the magnetic alignment structure, thereby aligning the microelectronic device to the microelectronic substrate. After alignment, the microelectronic device may be electrically attached to the substrate. Embodiments may include additionally incorporating an alignment detection coil within the microelectronic substrate, wherein the alignment detection coil may be powered to form a magnetic field to detect variations in the magnetic field generated by the alignment coil in order verify the alignment of the microelectronic device to the microelectronic substrate.

The present disclosure relates to the field of fabricating microelectronic packages, wherein cavities are formed in a dielectric layer deposited on a first substrate to maintain separation between soldered interconnections. In one embodiment, the cavities may have sloped sidewalls. In another embodiment, a solder paste may be deposited in the cavities and upon heating solder structures may be formed. In other embodiments, the solder structures may be placed in the cavities or may be formed on a second substrate to which the first substrate may be connected. In still other embodiments, solder structures may be formed on both the first substrate and a second substrate. The solder structures may be used to form solder interconnects by contact and reflow with either contact lands or solder structures on a second substrate.

A method for manufacturing a memory having at least one stacked integrated circuit chip is firstly to remove a plurality of transitional weld structures from a first IC chip. A varied insulation layer is then formed on the first IC chip. The varied insulation layer is then processed by a laser beam to form a plurality of metal-disposed portions. A plurality of chip-conductive structures are then formed on the metal-disposed portions. A plurality of manufactured weld structures is formed on the chip conductive structures. A second IC chip having a plurality of original weld structures is then provided to the first IC chip. The original weld structures of the second IC chip are connected to the chip conductive structures of the first IC chip to form a stacked IC chip. The stacked IC chip is then mounted onto a memory substrate component to form a memory having the stacked IC chip.

A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a bonding electrode, and a dummy electrode. The first semiconductor substrate has a first surface and a first wiring, and contains a first semiconductor material. The second semiconductor substrate has a second surface and a second wiring, and contains a second semiconductor material, and the first surface and the second surface face each other. The bonding electrode is arranged between the first surface and the second surface, and is electrically connected to the first wiring and the second wiring. The dummy electrode is arranged between the first surface and the second surface, and is electrically insulated from at least one of the first wiring and the second wiring. The bonding electrode has a bonding bump and a first bonding pad. The dummy electrode has a dummy bump and a first dummy pad.

Some embodiments of the present disclosure relate to a three dimensional integrated circuit (3DIC) structure. The 3DIC structure has a first die and a second die that is bonded to the first die by one or more bonding structures. The one or more bonding structures respectively have a first metal pad arranged on the first die and a second metal pad arranged on the second die. A first plurality of support structures are disposed between the first die and the second die. The first plurality of support structures include polymers and are laterally spaced apart from a closest one of the one or more bonding structures. The first plurality of support structures extend below an upper surface of the second metal pad.

Certain embodiments of the present disclosure provide a method for soldering a chip onto a surface. The method generally includes forming a bonding pad on the surface on which the chip is to be soldered, wherein the bonding pad is surrounded, at least in part, by dielectric material. The method may also include treating the dielectric material to render the dielectric material superomniphobic, and soldering the chip onto the bonding pad.