A bonding tool for bonding a semiconductor element to a substrate on a bonding machine is provided. The bonding tool includes a body portion including a contact region for contacting the semiconductor element during a bonding process on the bonding machine. The bonding tool also includes a standoff extending from the body portion, and configured to contact the substrate during at least a portion of the bonding process.

A flip chip interconnection including a circuit board is disclosed. The circuit board includes a substrate, inner leads, a T-shaped circuit line and a dummy pattern. The inner leads, the T-shaped circuit line and the dummy pattern are located on an inner bonding area of the substrate. The T-shaped circuit line includes a main segment, a branch segment and a connection segment that is connected to the main segment and the branch segment. The main segment and the branch segment are extended along a lateral direction and a longitudinal direction, respectively. The dummy pattern is located between the connection segment and the inner leads.

A flip chip interconnection includes a circuit board, a chip and a solder layer. The chip is mounted on an inner bonding area of the circuit board, the solder layer is located between the circuit board and the chip for bonding bumps to inner leads and a T-shaped circuit unit on the inner bonding area. The T-shaped circuit unit has a main part, a connection part and a branch part, the connection part is connected to the main and branch parts, respectively. The main part extends along a lateral direction and the branch part extends outwardly along a longitudinal direction. The connection part is narrower than the main part in width so as to prevent solder short caused by solder overflow on the branch part.

Embodiments may relate to a microelectronic package that includes a substrate with a cavity therein. A component may be positioned within the substrate, and exposed by the cavity. A solder bump may be positioned within the cavity and coupled with the component, and a bridge die may be coupled with the solder bump. Other embodiments may be described or claimed.

A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

A semiconductor device package includes a dielectric layer and a patterned conductive layer disposed in the dielectric layer. The dielectric layer has a first surface, a second surface opposite the first surface, and a third surface extended from the first surface to the second surface. The semiconductor device package also includes a first electronic component in direct contact with the first surface of the dielectric layer and a first connection structure disposed between the first electronic component and the patterned conductive layer. A method of manufacturing a semiconductor device package is also disclosed.

A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher.

A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher.

A semiconductor package substrate including a substrate; a first protective layer disposed on the substrate and including a through hole; and a second protective layer disposed inside the through hole of the first protective layer and spaced apart from the first protective layer, wherein a first edge of the first protective layer faces a first edge of the second protective layer, wherein a space between the first edge of the first protective layer and the first edge of the second protective layer includes at least a first separation region and a second separation region, and wherein a first width of the space in the first separation region is different than a second width of the space in the second separation region.

A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 m to 10 m. A method of manufacturing a metal surface with such micropores also is described.