Manufacturing of flip-chip type assemblies is provided, and includes forming one or more contact elements of electrically conductive material on a carrier surface of at least one chip carrier, providing a restrain structure around the contact elements, depositing solder material on the contact elements and/or on one or more terminals of electrically conductive material on a chip surface of at least one integrated circuit chip, and placing the chip with each terminal facing corresponding contact elements. Further, the method includes soldering each terminal to the corresponding contact element by a soldering material, the soldering material being restrained during a soldering of the terminals to the contact elements by the restrain structure, and forming one or more heat dissipation elements of thermally conductive material on the carrier surface for facing the chip surface displaced from the terminals, where the one or more heat dissipation elements are free of any solder mask.

A method of manufacturing a semiconductor memory device includes processing a first substrate including a first align mark and a first structure, processing a second substrate including a second align mark and a second structure, orientating the first substrate and the second substrate such that the first structure and the second structure face each other, and controlling alignment between the first structure and the second structure by using the first align mark and the second align mark to couple the first structure with the second structure.

Embodiments herein relate to systems, apparatuses, or processes directed to an interconnect joint that includes multiple core balls within a solder compound where the multiple core balls are substantially linearly aligned. The multiple core balls, which may include copper or be a polymer, couple with each other within the solder and form a substantially linear alignment during reflow. In embodiments, four or more core balls may be used to achieve a high aspect ratio interconnect joint with a tight pitch.

A method includes forming a metal bump on a top surface of a first package component, forming a solder region on a top surface of the metal bump, forming a protection layer extending on a sidewall of the metal bump, reflowing the solder region to bond the first package component to a second package component, and dispensing an underfill between the first package component and the second package component. The underfill is in contact with the protection layer.

A semiconductor device comprising: substrate having main surface facing thickness direction; wirings arranged on main surface; semiconductor element having back surface facing the main surface and electrodes formed on back surface, wherein the electrodes are bonded to the wirings; and columnar wirings located outside the semiconductor element as viewed along the thickness direction, protrude in direction away from the main surface in the thickness direction, and are arranged on the wirings, wherein the semiconductor element includes first circuit and second circuit, wherein the electrodes include first electrodes electrically connected to the first circuit and second electrodes electrically connected to the second circuit, wherein the columnar wirings include first columnar portions electrically connected to the first electrodes and second columnar portions electrically connected to the second electrodes, and wherein area of each first columnar portions is larger than area of each second columnar portions in the thickness direction.

A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 m to 10 m. A method of manufacturing a metal surface with such micropores also is described.

A flip-chip method includes providing a semiconductor chip and conductive connection pillars. Each of the conductive connection pillars has a first surface and a second surface opposite to the first surface. The flip-chip method also includes fixing the conductive connection pillars on a surface of the semiconductor chip. The first surfaces face the semiconductor chip. The flip-chip method also includes providing a carrier plate, forming solder pillars on the carrier plate, and forming a barrier layer on the carrier plate around the solder pillars. The flip-chip method further includes bringing the solder pillars into contact with the second surfaces of the conductive connection pillars. The conductive connection pillars are located above the solder pillars. The flip-chip method further includes performing a reflow-soldering process on the solder pillars, thereby forming solder layers from the solder pillars.

A mounting structure includes a semiconductor device including a first terminal, a wiring substrate including a second terminal having a first end, a wiring extracted from an end face of the first end, and a photosensitive insulating film that covers the wiring and the first end, the second terminal being disposed facing the first terminal, and a bump that electrically connects the first terminal and the second terminal.

A described example includes a package substrate having an array of die pads arranged in rows and columns on a die mount surface, and having an opposing board side surface; a solder mask layer overlying the die mount surface; a first plurality of solder mask defined openings in the solder mask layer at die pad locations, the solder mask defined openings exposing portions of a surface of corresponding die pads, the surface facing away from the package substrate; and at least one non-solder mask defined opening in the solder mask layer at a die pad location, exposing the entire surface of the die pad and sidewalls of the die pad at the non-solder mask defined opening.

The present invention relates to a structure for packaging and the method for manufacturing the same. The structure for packaging comprise two or more metal members disposed on a substrate or a semiconductor device. A patterned layer and an insulation layer are disposed surrounding the metal members. There is a gap between the patterned layer and the insulation layer. Thereby, while bonding the metal members, metal spilling can be avoided, for further preventing the structure from short circuit or current leakage.