Wafers include a contact pad on a surface of a bulk redistribution layer. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

A crystal controlled oscillator includes a crystal unit, an integrated circuit, and an insulating resin. The crystal unit contains a crystal vibrating piece resonating at a predetermined frequency. The integrated circuit places the crystal unit. The integrated circuit includes an oscillator circuit oscillating the crystal vibrating piece. The insulating resin is formed to cover the crystal unit on the integrated circuit.

Wafers include multiple bulk redistribution layers. A contact pad is formed on a surface of one of the bulk redistribution layers. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

A flip chip includes a substrate, an electrode pad layer stacked over the substrate, a passivation layer stacked at both ends of the electrode pad layer, an under bump metallurgy (UBM) layer stacked over the electrode pad layer and the passivation layer, and a bump formed over the UBM layer. The width of an opening on which the passivation layer is not formed over the electrode pad layer is greater than the width of the bump. The flip chip can prevent a crack from being generated in the pad upon ultrasonic bonding.

A semiconductor wafer processing method includes a step of forming a laser processed groove on the front side of a semiconductor wafer along each division line, a step of forming a mask layer on a protective layer except in an area above a metal electrode formed in each device on the front side of the wafer, a first etching step of etching the protective layer by using the mask layer to expose each metal electrode, a second etching step of etching the inner surface of each laser processed groove by using the mask layer used in the first etching step, thereby expanding each laser processed groove, and a dividing step of dividing the wafer along each laser processed groove expanded in the second etching step.

A multi-layer solder-resist provides useful adhesion to a semiconductor device package substrate while allowing for increasingly small geometries of bond pads and spacings.

A system and method of providing a coil in an electronic communication device in is disclosed. Multiple dielectric layers are deposited and patterned on a semiconductor substrate or insulating mold compound. The dielectric layers provide conductive contact with a contact pad on the underlying structure. Shielding for the coil, including a seed layer covered by an insulating material, is disposed in a via of a lowermost of the dielectric layers. Grounding of the shielding seed layer is through a contact pad on the substrate or a trace between the dielectric layers. A coil is fabricated over the shielding and a solder mask deposited and patterned to cover and insulate the coil. The coil is fabricated in a via of a dielectric layer immediately below the solder mask or above this dielectric layer. Electrical contact is provided by multiple copper and seed layers in the solder mask and dielectric layers.

An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.

A semiconductor device includes a metal column that extends in a stretching direction; a polymer layer that surrounds the metal column from a direction crossing the stretching direction; and a guide that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture containing metal particles and polymers in a guide; and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column that stretches in a stretching direction of the guide from the metal particles.

An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.