Patent classifications
H01L2224/1133
COPPER NANOROD-BASED THERMAL INTERFACE MATERIAL (TIM)
A copper nanorod thermal interface material (TIM) is described. The copper nanorod TIM includes a plurality of copper nanorods having a first end thermally coupled with a first surface, and a second end extending toward a second surface. A plurality of copper nanorod branches are formed on the second end. The copper nanorod branches are metallurgically bonded to a second surface. The first surface may be the back side of a die. The second surface may be a heat spread or a second die. The TIM may include a matrix material surrounding the copper nanorods. In an embodiment, the copper nanorods are formed in clusters.
Copper nanorod-based thermal interface material (TIM)
A copper nanorod thermal interface material (TIM) is described. The copper nanorod TIM includes a plurality of copper nanorods having a first end thermally coupled with a first surface, and a second end extending toward a second surface. A plurality of copper nanorod branches are formed on the second end. The copper nanorod branches are metallurgically bonded to a second surface. The first surface may be the back side of a die. The second surface may be a heat spread or a second die. The TIM may include a matrix material surrounding the copper nanorods. In an embodiment, the copper nanorods are formed in clusters.
Copper nanorod-based thermal interface material (TIM)
A copper nanorod thermal interface material (TIM) is described. The copper nanorod TIM includes a plurality of copper nanorods having a first end thermally coupled with a first surface, and a second end extending toward a second surface. A plurality of copper nanorod branches are formed on the second end. The copper nanorod branches are metallurgically bonded to a second surface. The first surface may be the back side of a die. The second surface may be a heat spread or a second die. The TIM may include a matrix material surrounding the copper nanorods. In an embodiment, the copper nanorods are formed in clusters.
Semiconductor device and method of manufactures
A semiconductor device and method of manufacture is provided. A reflowable material is placed in electrical connection with a through via, wherein the through via extends through an encapsulant. A protective layer is formed over the reflowable material. In an embodiment an opening is formed within the protective layer to expose the reflowable material. In another embodiment the protective layer is formed such that the reflowable material is extending away from the protective layer.