A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

A multi-pin wafer level chip scale package is achieved. One or more solder pillars and one or more solder blocks are formed on a silicon wafer wherein the one or more solder pillars and the one or more solder blocks all have a top surface in a same horizontal plane. A pillar metal layer underlies the one or more solder pillars and electrically contacts the one or more solder pillars with the silicon wafer through an opening in a polymer layer over a passivation layer. A block metal layer underlies the one or more solder blocks and electrically contacts the one or more solder pillars with the silicon wafer through a plurality of via openings through the polymer layer over the passivation layer wherein the block metal layer is thicker than the pillar metal layer.

Package structures and methods for forming the same are provided. The method includes forming a passivation layer having an opening and forming a first seed layer in the opening. The method further includes filling the opening with a conductive layer over the first seed layer and bonding an integrated circuit die to the conductive layer over a first side of the passivation layer. The method further includes removing a portion of the first seed layer to expose a top surface of the conductive layer and to partially expose a first sidewall of the passivation layer from a second side of the passivation layer and forming a second seed layer over the top surface of the conductive layer and over the first sidewall of the passivation layer.

Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes bumps to electrically couple the die to the substrate. Ones of the bumps have corresponding bases. The bases have a shape that is non-circular.

Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes bumps to electrically couple the die to the substrate. Ones of the bumps have corresponding bases. The bases have a shape that is non-circular.

An integrated fan-out package includes a die, an encapsulant, a seed layer, a conductive pillar, a redistribution structure, and a buffer layer. The encapsulant encapsulates the die. The seed layer and the conductive pillar are sequentially stacked over the die and the encapsulant. The redistribution structure is over the die and the encapsulant. The redistribution structure includes a conductive pattern and a dielectric layer. The conductive pattern is directly in contact with the seed layer and the dielectric layer covers the conductive pattern and surrounds the seed layer and the conductive pillar. The buffer layer is disposed over the redistribution structure. The seed layer is separate from the dielectric layer by the buffer layer, and a Young's modulus of the buffer layer is higher than a Young's modulus of the dielectric layer of the redistribution structure.

Provided is a method of manufacturing a semiconductor device including a bump interconnect structure. In the method of manufacturing the semiconductor device, a first substrate including a connection pad is formed, and a bump including a solder layer and a metal post protruding from the solder layer are formed on the connection pad. A second substrate including a bump land may be formed. The first substrate may be disposed on the second substrate so that a protruding end of the metal post contacts the bump land, and the solder layer may be reflowed. Accordingly, it possible to interconnect the metal post to the bump land.

A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a die structure including a plurality of die regions and a plurality of first seal rings. Each of the plurality of first seal rings surrounds a corresponding die region of the plurality of die regions. The semiconductor device further includes a second seal ring surrounding the plurality of first seal rings and a plurality of connectors bonded to the die structure. Each of the plurality of connectors has an elongated plan-view shape. A long axis of the elongated plan-view shape of each of the plurality of connectors is oriented toward a center of the die structure.