A solid-state imaging device encompasses a detector substrate having a first main-surface, on which a plurality of first lands are arranged in a matrix, and a signal-circuit substrate having a second main-surface, on which plurality of second lands are arranged so as to face the arrangement of the first lands. A plurality of tubular bumps, each of which having a flattened plane pattern, and is provided between each of the first lands and each of the second lands. The tubular bumps respectively have major-axis directions to define inclined angles, and are arranged in the matrix such that the inclined angles differ depending on locations of the plurality of tubular bumps.

A solid-state imaging device encompasses a detector substrate having a first main-surface, on which a plurality of first lands are arranged in a matrix, and a signal-circuit substrate having a second main-surface, on which plurality of second lands are arranged so as to face the arrangement of the first lands. A plurality of tubular bumps, each of which having a flattened plane pattern, and is provided between each of the first lands and each of the second lands. The tubular bumps respectively have major-axis directions to define inclined angles, and are arranged in the matrix such that the inclined angles differ depending on locations of the plurality of tubular bumps.

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

A method for forming solder bumps by using a solder paste containing solder particles and a volatile dispersion medium, the method including: applying a solder paste on a member having a plurality of electrodes on the surface; heating the member and the solder paste at a temperature below the melting point of solder constituting the solder particles to form a solder particle-containing layer; heating the member and the solder particle-containing layer in a reducing atmosphere and at a temperature equal to or higher than the melting point of the solder constituting the solder particles to form solder bumps; and removing, by cleaning, a residue of the solder particle-containing layer remaining between adjacent solder bumps, in which the solder particles have an average particle size of 10 ?m or less, and the content of the dispersion medium in the solder paste is 30% by mass or more.

A semiconductor device includes a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductor over the conductive pad, a polymeric material over the semiconductor substrate and surrounding the conductor, and a seed layer between the polymeric material and the conductor. A top surface of the conductor, a top surface of the polymeric material and a top surface of the seed layer are substantially coplanar.

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material to form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material to form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening.

A semiconductor device includes a semiconductor substrate, a conductive pad on the semiconductor substrate, and a conductor over the conductive pad. The semiconductor device further has a polymeric material disposed over the semiconductor substrate and surrounding the conductor. The semiconductor device also includes an electric conductive layer between the conductor and the polymeric material. In the semiconductor device, an adhesion strength between the electric conductive layer and the polymeric material is greater than an adhesion strength between the polymeric material and the conductor.

A printable component structure includes a chiplet having a semiconductor structure with a top side and a bottom side, one or more top electrical contacts on the top side of the semiconductor structure, and one or more bottom electrical contacts on the bottom side of the semiconductor structure. One or more electrically conductive spikes are in electrical contact with the one or more top electrical contacts. Each spike protrudes from the top side of the semiconductor structure or a layer in contact with the top side of the semiconductor structure.