Patent classifications
H01L2224/1148
Curved pillar interconnects
A light-emitting diode (LED) array is formed by bonding an LED chip or wafer to a backplane substrate via curved interconnects. The backplane substrate may include circuits for driving the LED's. One or more curved interconnects are formed on the backplane substrate. A curved interconnect may be electrically connected to a corresponding circuit of the backplane substrate, and may include at least a portion with curvature. The LED chip or wafer may include one or more LED devices. Each LED device may have one or more electrical contacts. The LED chip or wafer is positioned above the backplane substrate to spatially align electrical contacts of the LED devices with the curved interconnects on the backplane substrate. The electrical contacts are bonded to the curved interconnects to electrically connect the LED devices to corresponding circuits of the backplane substrate.
BONDED ASSEMBLY CONTAINING BONDING PADS SPACED APART BY POLYMER MATERIAL, AND METHODS OF FORMING THE SAME
A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first metallic plates. First bonding pads including a respective one of the first metallic plates are formed. A first polymer material layer can be formed over the first bonding pads. A second semiconductor die including second bonding pads is bonded to the first bonding pads to form a bonded assembly.
METHOD FOR CONNECTING CROSS-COMPONENTS AT OPTIMISED DENSITY
A method for electrical connection by hybridisation of a first component with a second component. The method comprises the following steps: forming pads of ductile material in contact respectively with connection zones of the first component; forming inserts of conductive material in contact with the connection zones of the second component; forming hybridisation barriers arranged between the inserts and electrically insulated from each other, the first and second hybridisation barriers serving as a barrier by containing the deformation of the pads of ductile material during the connection of the connection zones of the first component with those of the second component. The disclosure also relates to an assembly of two connected components.
Method for fabrication of a semiconductor structure including an interposer free from any through via
A method of forming a semiconductor structure includes introducing, at selected conditions, hydrogen and helium species (e.g., ions) in a temporary support to form a plane of weakness at a predetermined depth therein, and to define a superficial layer and a residual part of the temporary support; forming on the temporary support an interconnection layer; placing at least one semiconductor chip on the interconnection layer; assembling a stiffener on a back side of the at least one semiconductor chip; and providing thermal energy to the temporary support to detach the residual part and provide the semiconductor structure. The interconnection layer forms an interposer free from any through via.
Integrated circuit structure and method for reducing polymer layer delamination
An embodiment integrated circuit structure includes a substrate, a metal pad over the substrate, a post-passivation interconnect (PPI) structure over the substrate and electronically connected to the metal pad, a first polymer layer over the PPI structure, an under bump metallurgy (UBM) extending into an opening in the first polymer layer and electronically connected to the PPI structure, and a barrier layer on a top surface of the first polymer layer adjacent to the UBM.
Systems and Methods for Releveled Bump Planes for Chiplets
An integrated circuit and a method for designing an IC wherein the base or host chip is bonded to smaller chiplets via DBI technology. The bonding of chip to chiplet creates an uneven or multi-level surface of the overall chip requiring a releveling for future bonding. The uneven surface is built up with plating of bumps and subsequently releveled with various methods including planarization.
ELECTRICALLY CONDUCTIVE PASTE FOR FORMING PILLARS
The known electrolytic plating method is disadvantageous in that it is difficult to form thin pillars without being influenced by undercuts. The electroless plating method is disadvantageous in that it is difficult to form pillars in the same shape without voids. As a solution to these, the electrically conductive paste according to the present invention for forming pillars is used to make pillars by filling. This helps prevent undercuts, and it is also intended to provide metal pillars in the same shape with good reproducibility. The inventors found that an electrically conductive paste that is very small fine metal particles and contains a particular percentage of fine metal particles is extraordinarily advantageous in forming pillars.
RESIST STRUCTURE FOR FORMING BUMPS
A method for fabricating a resist structure is presented. The method includes preparing a substrate on which plural conductive pads are formed; and patterning a lower resist to form plural lower cavities. The lower resist is deposited above the substrate. Each of the plural lower cavities are located above a corresponding one of the plural conductive pads. Additionally, the method includes patterning an upper resist to form plural upper cavities. The upper resist is deposited on the lower resist. Each of the plural upper cavities are located on a corresponding one of the plural lower cavities and have a diameter larger than a diameter of the corresponding one of the plural lower cavities.
Interconnect structures and methods of forming same
Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector.
Integrated magnetic concentrator and connection
A semiconductor device includes an electronic circuit, an interconnection contact such as a solder ball, and a plate configured to concentrate magnetic flux to a predetermined area. The plate is electrically conductive, and it is electrically connected to the electronic circuit.