Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate, a plurality of metallic pillars, a plurality of metallic protrusions, a capping layer, and a passivation layer. The metallic pillars are disposed on the substrate. The metallic protrusions extend from an upper surface of the metallic pillars. The capping layer is disposed on the metallic protrusions. The passivation layer is disposed on sidewalls of the protrusions and the capping layer.

A semiconductor device includes a substrate, a structured interlayer on the substrate and having a defined edge, and a structured metallization on the structured interlayer and also having a defined edge. The defined edge of the structured interlayer faces the same direction as the defined edge of the structured metallization. The defined edge of the structured interlayer extends beyond the defined edge of the structured metallization by at least 0.5 microns so that the defined edge of the structured metallization terminates before reaching the defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature and the structured metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer.

An electronic component includes a substrate having a first main surface on one side and a second main surface on the other side, a chip having a first chip main surface on one side and a second chip main surface on the other side, and a plurality of electrodes formed on the first chip main surface and/or the second chip main surface, the chip being arranged on the first main surface of the substrate, a sealing insulation layer that seals the chip on the first main surface of the substrate such that the second main surface of the substrate is exposed, the sealing insulation layer having a sealing main surface that opposes the first main surface of the substrate, and a plurality of external terminals formed to penetrate through the sealing insulation layer so as to be exposed from the sealing main surface of the sealing insulation layer, the external terminals being respectively electrically connected to the plurality of electrodes of the chip.

A semiconductor device includes a structured interlayer on a substrate, a structured power metallization on the structured interlayer, and a barrier on the structured power metallization. The barrier is configured to prevent diffusion of at least one of water, water ions, sodium ions, potassium ions, chloride ions, fluoride ions, and sulphur ions towards the structured power metallization. A first defined edge of the structured interlayer faces the same direction as a first defined edge of the structured power metallization and extends beyond the first defined edge of the structured power metallization by at least 0.5 microns. The structured interlayer has a compressive residual stress at room temperature and the structured power metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer. The first defined edge of the structured power metallization has a sidewall which slopes inward.

A method for manufacturing chip package is disclosed. The method includes providing a wafer having an upper surface and a lower surface opposite thereto, in which the wafer comprises a plurality of conductive pads disposed on the upper surface; dicing the upper surface of the wafer to form a plurality of trenches; forming a patterned photoresist layer on the upper surface and in the trenches; forming a plurality of conductive bumps disposed correspondingly on the conductive pads; thinning the wafer from the lower surface toward the upper surface, such that the patterned photoresist layer in the trenches is exposed from the lower surface; forming an insulating layer under the lower surface; and dicing the patterned photoresist layer and the insulating layer along each trench to form a plurality of chip packages.

A semiconductor device includes a semiconductor substrate, a conductive pad disposed on the semiconductor substrate, and a pillar pattern disposed on the conductive pad. The semiconductor device further includes a solder seed pattern disposed on the pillar pattern, and a solder portion disposed on the pillar pattern and the solder seed pattern. A first width of the solder seed pattern is less than a second width of a top surface of the pillar pattern.

Methods and apparatus are described for enabling copper-to-copper (CuCu) bonding at reduced temperatures (e.g., at most 200 C.) by significantly reducing Cu oxide formation. These techniques provide for faster cycle time and entail no extraordinary measures (e.g., forming gas). Such techniques may also enable longer queue (Q) or staging times. One example semiconductor structure generally includes a semiconductor layer, an adhesion layer disposed above the semiconductor layer, an anodic metal layer disposed above the adhesion layer, and a cathodic metal layer disposed above the anodic metal layer. An oxidation potential of the anodic metal layer may be greater than an oxidation potential of the cathodic metal layer. Such a semiconductor structure may be utilized in fabricating IC packages implementing 2.5D or 3D integration.

A printed structure comprises a device comprising device electrical contacts disposed on a common side of the device and a substrate non-native to the device comprising substrate electrical contacts disposed on a surface of the substrate. At least one of the substrate electrical contacts has a rounded shape. The device electrical contacts are in physical and electrical contact with corresponding substrate electrical contacts. The substrate electrical contacts can comprise a polymer core coated with a patterned contact electrical conductor on a surface of the polymer core. A method of making polymer cores comprising patterning a polymer on the substrate and reflowing the patterned polymer to form one or more rounded shapes of the polymer and coating and then patterning the one or more rounded shapes with a conductive material.