A package structure and method for forming the same are provided. The package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. The package structure includes a first insulating layer formed on the conductive structure, and the first insulating layer includes monovalent metal oxide. A second insulating layer is formed between the first insulating layer and the package layer. The second insulating layer includes monovalent metal oxide, and a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in first insulating layer.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a conductive structure over the substrate. The semiconductor device structure includes first metal oxide fibers over the conductive structure. The semiconductor device structure includes a dielectric layer over the substrate and covering the conductive structure and the first metal oxide fibers. The dielectric layer fills gaps between the first metal oxide fibers.

Many aspects of an improved IC package are disclosed herein. The improved IC package exhibits low-impedance and high power and signal integrity. The improved IC package comprises an IC die mounted on a multilayer coreless substrate. The thicknesses of prepreg layers of the coreless substrate are specific chosen to minimize warpage and to provide good mechanical performance. Each of the prepreg layers may have different coefficient of thermal expansion (CTE) and/or thickness to enable better control of the coreless substrate mechanical properties. The improved IC package also includes a vertically mounted die side capacitor and a conductive layer formed on the solder resist layer of the substrate. The conductive layer is formed such that it also encapsulates the vertically mounted capacitor while being electrically coupled to one of the capacitor's electrode.

A package structure and method for forming the same are provided. The package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. The package structure includes a first insulating layer formed on the conductive structure, and the first insulating layer includes monovalent metal oxide. A second insulating layer is formed between the first insulating layer and the package layer. The second insulating layer includes monovalent metal oxide, and a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in first insulating layer.

A semiconductor device includes a first conductive portion, a second conductive portion, a first layer, and a second layer. The first conductive portion includes a first end portion and a first extending portion. The first extending portion extends in a first direction. The length of the first extending portion in a second direction is shorter than a length of at least a part of the first end portion in the second direction. The first layer includes multiple semiconductor chips, multiple passive chip components, and a resin. The first extending portion includes a first portion and a second portion. The first layer is provided around the first portion. The first layer expands along a first plane. The first plane intersects the first direction. The second layer includes a first multilayer wiring. The second layer expands along a second plane intersecting the first direction.

A solder ball includes a solder member having a spherical shape and crack prevention members including a plurality of conductive wires irregularly distributed in the solder member and ceramic coating layers covering surfaces of the plurality of conductive wires.

An electronic component includes an electronic component main body including a first surface, a signal bump electrode arranged on the first surface to protrude from the first surface of the electronic component main body, and a protective film provided with an opening through which a part of the signal bump electrode is exposed, the protective film being arranged to cover a portion of the signal bump electrode other than a portion exposed through the opening. The protective film includes a first insulating film, a second insulating film that covers the first insulating film, and a first shield film arranged as lying between the first insulating film and the second insulating film. The first shield film is covered with at least one of the first insulating film and the second insulating film so as not to be exposed at an inner surface of the opening.