Semiconductor device package assemblies and associated methods are disclosed herein. In some embodiments, the semiconductor device package assembly includes (1) a base component having a front side and a back side opposite the first side, the base component having a first metallization structure at the front side, the first metallization structure being exposed in a contacting area at the front side; (2) a semiconductor device package having a first side and a second side, the semiconductor device package having a second metallization structure at the first side; and (3) a metal bump at least partially positioned in the recess and electrically coupled to the second metallization structure and the first metallization structure.

Semiconductor device package assemblies and associated methods are disclosed herein. In some embodiments, the semiconductor device package assembly includes (1) a base component having a front side and a back side opposite the first side, the base component having a first metallization structure at the front side, the first metallization structure being exposed in a contacting area at the front side; (2) a semiconductor device package having a first side and a second side, the semiconductor device package having a second metallization structure at the first side; and (3) a metal bump at least partially positioned in the recess and electrically coupled to the second metallization structure and the first metallization structure.

A bonding structure is a bonding structure which bonds a light emitting element and a substrate and includes a first electrode formed on the light emitting element, a second electrode formed on the substrate, and a bonding layer which bonds the first electrode and the second electrode, and the bonding layer contains a first bonding metal component and a second bonding metal component different from the first bonding metal component.

A bonding structure is a bonding structure which bonds a light emitting element and a substrate and includes a first electrode formed on the light emitting element, a second electrode formed on the substrate, and a bonding layer which bonds the first electrode and the second electrode, and the bonding layer contains a first bonding metal component and a second bonding metal component different from the first bonding metal component.

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. The fill layer is composed of noble metal (such as copper) and active metal (such as Zn). Then the fill metal layer is turned into a metal alloy after annealing. A dealloying is performed to the metal alloy to remove the active metal from the metal alloy while the noble metal remains to self-assemble into porous (nanoporous) structure metal. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using dielectric-to-dielectric direct bonding techniques, with the fill nanoporous metal layer in the recesses in one of the first and second interconnect structures. After the following batch annealing, the fill nanoporous metal layer turns into pure bulk metal same as conductive interconnect structures due to the heat expansion of conductive interconnect structures and nanoporous metal densification.

In a method of manufacturing a semiconductor device according to one embodiment, after a semiconductor wafer including a non-volatile memory, a bonding pad and an insulating film comprised of an organic material is provided, a probe needle is contacted to a surface of the bonding pad located in a second region, and a data is written to the non-volatile memory. Here, the insulating film is formed by performing a first heat treatment to the organic material. Also, after a second heat treatment is performed to the semiconductor wafer, and the non-volatile memory to which the data is written is checked, a barrier layer and a first solder material are formed on the surface of the bonding pad located in a first region by using an electroplating method. Further, a bump electrode is formed in the first region by performing a third heat treatment to the first solder material.

In some examples, a package comprises a die and a redistribution layer coupled to the die. The redistribution layer comprises a metal layer, a brass layer abutting the metal layer, and a polymer layer abutting the brass layer.

Embodiments relate to the design of a device capable of maintaining the alignment an interconnect by resisting lateral forces acting on surfaces of the interconnect. The device comprises a first body comprising a first surface with a nanoporous metal structure protruding from the first surface. The device further comprises a second body comprising a second surface with a locking structure to resist a lateral force between the first body and the second body during or after assembly of the first body and the second body.

Embodiments relate to the design of a device capable of maintaining the alignment an interconnect by resisting lateral forces acting on surfaces of the interconnect. The device comprises a first body comprising a first surface with a nanoporous metal structure protruding from the first surface. The device further comprises a second body comprising a second surface with a locking structure to resist a lateral force between the first body and the second body during or after assembly of the first body and the second body.

A serigraphy method for producing a soulder bump on the front surface of a substrate includes: forming a film on the front surface, forming an opening in the film, filling the opening with a souldering material, and removing the film. Forming a film on the front surface is preceded by the formation of an intermediate layer between the film and the front surface, the intermediate layer being adapted to exhibit a force of adherence at one and/or the other interface formed with the first front surface and the film lower than the force of adherence that can be formed between the film and the first front surface.