A tin plating solution and a method for fabricating a semiconductor device are provided. The tin plating solution comprises tin ions supplied from a soluble tin electrode, an aliphatic sulfonic acid having a carbon number of 1 to 10, an anti-oxidant, a wetting agent, and a grain refiner that is an aromatic carbonyl compound.

A semiconductor device has a semiconductor wafer and a first conductive layer formed over the semiconductor wafer as contact pads. A first insulating layer formed over the first conductive layer. A second conductive layer including an interconnect site is formed over the first conductive layer and first insulating layer. The second conductive layer is formed as a redistribution layer. A second insulating layer is formed over the second conductive layer. An opening is formed in the second insulating layer over the interconnect site. The opening extends to the first insulating layer in an area adjacent to the interconnect site. Alternatively, the opening extends partially through the second insulating layer in an area adjacent to the interconnect site. An interconnect structure is formed within the opening over the interconnect site and over a side surface of the second conductive layer. The semiconductor wafer is singulated into individual semiconductor die.

A semiconductor device has a semiconductor wafer and a first conductive layer formed over the semiconductor wafer as contact pads. A first insulating layer formed over the first conductive layer. A second conductive layer including an interconnect site is formed over the first conductive layer and first insulating layer. The second conductive layer is formed as a redistribution layer. A second insulating layer is formed over the second conductive layer. An opening is formed in the second insulating layer over the interconnect site. The opening extends to the first insulating layer in an area adjacent to the interconnect site. Alternatively, the opening extends partially through the second insulating layer in an area adjacent to the interconnect site. An interconnect structure is formed within the opening over the interconnect site and over a side surface of the second conductive layer. The semiconductor wafer is singulated into individual semiconductor die.

A method includes forming a metal bump on a top surface of a first package component, forming a solder region on a top surface of the metal bump, forming a protection layer extending on a sidewall of the metal bump, reflowing the solder region to bond the first package component to a second package component, and dispensing an underfill between the first package component and the second package component. The underfill is in contact with the protection layer.

A method includes forming a metal bump on a top surface of a first package component, forming a solder region on a top surface of the metal bump, forming a protection layer extending on a sidewall of the metal bump, reflowing the solder region to bond the first package component to a second package component, and dispensing an underfill between the first package component and the second package component. The underfill is in contact with the protection layer.

A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

In order to manufacture an alloy bump, a resist pattern having openings which expose a substrate is formed on the substrate, an under-bump metal is formed on the substrate inside the openings, a first plating film is formed on the under-bump metal by electroplating, a second plating film containing no metal components which are contained in the first plating film is formed on the first plating film by electroplating, the resist pattern is removed, and the alloy bump is formed by heat treating the substrate to thereby alloy the first plating film and the second plating film.

In order to manufacture an alloy bump, a resist pattern having openings which expose a substrate is formed on the substrate, an under-bump metal is formed on the substrate inside the openings, a first plating film is formed on the under-bump metal by electroplating, a second plating film containing no metal components which are contained in the first plating film is formed on the first plating film by electroplating, the resist pattern is removed, and the alloy bump is formed by heat treating the substrate to thereby alloy the first plating film and the second plating film.

An integrated circuit device includes a semiconductor substrate; and a pad region over the semiconductor substrate. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer over the pad region. The integrated circuit device further includes a conductive pillar on the UBM layer, wherein the conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes a protection structure over the sidewall surface of the conductive pillar, wherein sidewalls of the UBM layer are substantially free of the protection structure, and the protection structure is a non-metal material.