An integrated circuit and a method for designing an IC wherein the base or host chip is bonded to smaller chiplets via DBI technology. The bonding of chip to chiplet creates an uneven or multi-level surface of the overall chip requiring a releveling for future bonding. The uneven surface is built up with plating of bumps and subsequently releveled with various methods including planarization.

Packages for semiconductor devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region, a molding material around the integrated circuit die mounting region, and an interconnect structure over the molding material and the integrated circuit die mounting region. The interconnect structure has contact pads, and connectors are coupled to the contact pads. Two or more of the connectors have an alignment feature formed thereon.

The present technology relates to an imaging device, an electronic apparatus, and a method of manufacturing an imaging device capable of thinning a semiconductor on a terminal extraction surface while maintaining a strength of a semiconductor chip. There is provided an imaging device including: a first substrate having a pixel region in which pixels are two-dimensionally arranged, the pixels performing photoelectric conversion of light; and a second substrate in which a through silicon via is formed, in which a dug portion is formed in a back surface of the second substrate opposite to an incident side of light of the second substrate, and a redistribution layer (RDL) connected to a back surface of the first substrate is formed in the dug portion. The present technology can be applied to, for example, a semiconductor package including a semiconductor chip.

The present technology relates to an imaging device, an electronic apparatus, and a method of manufacturing an imaging device capable of thinning a semiconductor on a terminal extraction surface while maintaining a strength of a semiconductor chip. There is provided an imaging device including: a first substrate having a pixel region in which pixels are two-dimensionally arranged, the pixels performing photoelectric conversion of light; and a second substrate in which a through silicon via is formed, in which a dug portion is formed in a back surface of the second substrate opposite to an incident side of light of the second substrate, and a redistribution layer (RDL) connected to a back surface of the first substrate is formed in the dug portion. The present technology can be applied to, for example, a semiconductor package including a semiconductor chip.

A semiconductor device includes a plurality of connectors and at least one insulating layer disposed over a semiconductor substrate. A molding layer extends around the plurality of connectors. A sidewall of the molding layer that is closest to a scribe line is offset from the scribe line.

A wiring substrate includes a resin insulating layer, a via conductor formed in the resin insulating layer such that the via conductor is penetrating through the resin insulating layer, a conductor pad formed on the resin insulating layer and connected to the via conductor, a coating insulating layer formed on the resin insulating layer such that the coating insulating layer is covering the conductor pad, and a metal post formed on the conductor pad and protruding from the coating insulating layer. The via conductor is formed such that the via conductor is increased in diameter toward the conductor pad, and the metal post is formed such that the metal post is increased in diameter toward the conductor pad.

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a seed layer to cover a first passivation layer over a semiconductor substrate. The method also includes forming a metal layer to partially cover the seed layer by using the seed layer as an electrode layer in a first plating process and forming a metal pillar bump over the metal layer by using the seed layer as an electrode layer in a second plating process. In addition, the method includes forming a second passivation layer over the metal layer, wherein the second passivation layer includes a protrusion portion extending from a top surface of the second passivation layer and surrounding the sidewall of the metal pillar bump.

A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

A stackable via package includes a substrate having an upper surface and a trace on the upper surface, the trace including a terminal. A solder ball is on the terminal. The solder ball has a solder ball diameter A and a solder ball height D. A via aperture is formed in a package body enclosing the solder ball to expose the solder ball. The via aperture includes a via bottom having a via bottom diameter B and a via bottom height C from the upper surface of the substrate, where A<B and 0=<C<1/2×D. The shape of the via aperture prevents solder deformation of the solder column formed from the solder ball as well as prevents solder bridging between adjacent solder columns.

A method includes forming a first passivation layer, forming a metal pad over the first passivation layer, forming a planarization layer having a planar top surface over the metal pad, and patterning the planarization layer to form a first opening. A top surface of the metal pad is revealed through the first opening. The method further includes forming a polymer layer extending into the first opening, and patterning the polymer layer to form a second opening. The top surface of the metal pad is revealed through the second opening.