An integrated circuit (IC) chip includes a via contact plug extending inside a through hole passing through a substrate and a device layer, a via contact liner surrounding the via contact plug, a connection pad liner extending along a bottom surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. A method of manufacturing an IC chip includes forming an under bump metallurgy (UBM) layer inside and outside the through hole and forming a first connection metal layer, a second connection metal layer, and a third connection metal layer. The first connection metal layer covers the UBM layer inside the through hole, the second connection metal layer is integrally connected to the first connection metal layer, and the third connection metal layer covers the UBM layer on the connection pad liner.

A system-on-wafer structure and a fabrication method. The structure includes a wafer substrate, an integrated chiplet, a system configuration board and a thermal module. The wafer substrate and the integrated chiplet are bonded through a wafer micro bump array and a chiplet micro bump array. The wafer substrate and the system configuration board are bonded through a copper pillar array on wafer substrate topside and a pad on system configuration board backside. A molding layer is provided between the wafer substrate and the system configuration board, and is configured to mold the wafer substrate, the integrated chiplet and the copper pillar array. Integrated chiplet are electrically connected to each other through a re-distributed layer in wafer substrate. The integrated chiplet is electrically connected to the system configuration board through the re-distributed layer and the copper pillar array. The thermal module is attached to the backside of the wafer substrate.

The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.

[Object] A semiconductor device is configured to release heat from semiconductor chips more efficiently. [Means for Solution] A semiconductor device includes: a die pad 11 which has a die pad main surface 111 and a die pad rear surface 112; a semiconductor chip 41 mounted on the die pad main surface 111; a sealing resin portion 7 formed with a recess 75 for exposure of the die pad rear surface 11 and covering the die pad 11 and the semiconductor chip 41; and a heat releasing layer 6 disposed in the recess 75. The recess 75 has a recess groove 753 outside the die pad 11 in a direction in which the die pad rear surface 112 extends, and the recess groove 753 is closer to the die pad main surface 111 than to the die pad rear surface 112. The heat releasing layer 6 has a junction layer which is in contact with the die pad rear surface 112 and having part thereof filling the recess groove 753.

A single memory package includes a package substrate; at least one of a memory chip and a buffer chip mounted on the package substrate; M?N number of interface data channel buses between the memory chip and the buffer chip; and (M?N)/2.sup.n number of outer data channel buses connected to the buffer chip. The buffer chip receives data from the memory chip through the interface data channel buses, and provides the data through the outer data channel buses. The M, N, and n are natural numbers.

The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.

A semiconductor device of the ball grid array (BGA) type, the device having an electrode, and a process of forming the electrode are disclosed. The electrode includes an insulating film, a seed layer on the insulating film, a mound metal on the insulating film and an interconnection on the seed layer. The mound metal surrounds the seed layer without forming any gap therebetween. The interconnection, which is formed by electroless plating, is apart from the insulating film with the mound metal as an extension barrier for the plating.

In an embodiment a semiconductor component includes a laterally extending contact area laterally interrupted in such a way that material of the contact area laterally delimits at least one recess, the contact area configured to be at a potential, wherein at least one first recess is formed laterally as a circular ring around a lateral center point of the contact area, and wherein at least one second recess extends laterally in a straight line through the lateral center point of the contact area so that the contact area is divided by a corresponding recess into two halves which are not connected by material of the contact area.

In some forms, an electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes a plurality of lobes projecting distally from a center of the ball pad. In some forms, he electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes a lobe projecting distally from a center of the ball pad. In some forms, the electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes at least one lobe projecting distally from a center of the ball pad; and an electronic package that includes at least one conductor that electrically connects the ball pad on the substrate to the electronic package.

A conductive bump assembly may include a passive substrate. The conductive bump assembly may also include a conductive bump pad supported by the passive substrate and surrounded by a first passivation layer opening. The conductive bump assembly may further include a second passivation layer opening on the passive substrate. The second passivation layer opening may be merged with the first passivation layer opening surrounding the conductive bump pad proximate an edge of the passive substrate. The conductive bump assembly may also include a conductive bump on the conductive bump pad.