A cryogenic electronic package includes at least two superconducting and/or conventional metal semiconductor structures. Each of the semiconductor structures includes a substrate and a superconducting trace. Additionally, each of the semiconductor structures includes a passivation layer and one or more under bump metal (UBM) structures. The cryogenic electronic package also includes one or more superconducting and/or conventional metal interconnect structures disposed between selected ones of the at least two superconducting semiconductor structures. The interconnect structures are electrically coupled to respective ones of the UBM structures of the semiconductor structures to form one or more electrical connections between the semiconductor structures. A method of fabricating a cryogenic electronic package is also provided.

The present disclosure provides a memory system packaging structure and fabrication methods. The memory system packaging structure includes memory modules, a memory controller, a redistribution layer electrically connected to the memory controller, a plastic encapsulation layer encapsulating the memory modules and the memory controller, and one or more connecting pillars extending in the vertical direction and configured for providing electric power to the memory modules. Each memory module includes memory dies stacked in a vertical direction. Each connecting pillar includes a first portion being in physical contact with one of the memory dies and a second portion being in physical contact with the redistribution layer.

A semiconductor device has a semiconductor die and substrate with a plurality of stud bumps formed over the semiconductor die or substrate. The stud bumps include a base portion and stem portion extending from the base portion. The stud bumps include a non-fusible material or fusible material. The semiconductor die is mounted to the substrate with the stud bumps electrically connecting the semiconductor die to the substrate. A width of the base portion is greater than a mating conductive trace formed on the substrate. Alternatively, a vertical interconnect structure, such as a conductive column, is formed over the semiconductor die or substrate. The conductive column can have a tapered sidewall or oval cross sectional area. An underfill material is deposited between the semiconductor die and substrate. The semiconductor die includes a flexible property. The vertical interconnect structure includes a flexible property. The substrate includes a flexible property.

A semiconductor device and formation thereof. The semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a plurality of pillars interconnecting the first semiconductor structure and the second semiconductor structure. The plurality of pillars include a first solder layer and a second solder layer, wherein the first solder layer has a higher melting point than the second solder layer.

A semiconductor device includes: a semiconductor element having a first electrode and a second electrode on a first surface, and a third electrode on a second surface, wherein continuity between the second electrode and the third electrode is controlled by a voltage applied to the first electrode; a conductive first lead that is electrically connected to the first electrode and extends beyond a periphery of the first surface; and a conductive second lead that is electrically connected to the second electrode and extends beyond the periphery of the first surface. At least one edge of the periphery of the first surface faces neither the first lead nor the second lead, and portions of the first lead and the second lead that face the periphery of the first surface are provided with respective grooves.

A semiconductor package includes a base film, a semiconductor die on the base film, metal studs on the semiconductor die, shielding pillars on the base film and around the semiconductor die, a first molding compound encapsulating the semiconductor die, the metal studs, and the shielding pillars, a first re-distribution structure on the first molding compound, a second molding compound on the first re-distribution structure, through-mold-vias in the second molding compound, and a second re-distribution structure on the second molding compound and electrically connected to the through-mold-vias. The second re-distribution structure comprises an antenna.

A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.

A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.

Chip package structure and chip package method are provided. The chip package structure includes an encapsulating layer, a redistribution layer, a soldering pad group, and bare chips. Connecting posts is formed on a side of the bare chips. The encapsulating layer covers the bare chips and the connecting posts, while exposes a side of the connecting posts away from the bare chips. The redistribution layer on the connecting posts includes a first redistribution wire, a second redistribution wire, and a third redistribution wire. The first redistribution wire and the second redistribution wire are electrically connected to at least one connecting post respectively, and the third redistribution layer is electrically connected to remaining connecting posts. The soldering pad group on the redistribution layer includes an input soldering pad electrically connected to the first redistribution wire and an output soldering pad electrically connected to the second redistribution wire.

Chip package structure and chip package method are provided. The chip package structure includes an encapsulating layer, a redistribution layer, a soldering pad group, and bare chips. Connecting posts is formed on a side of the bare chips. The encapsulating layer covers the bare chips and the connecting posts, while exposes a side of the connecting posts away from the bare chips. The redistribution layer on the connecting posts includes a first redistribution wire, a second redistribution wire, and a third redistribution wire. The first redistribution wire and the second redistribution wire are electrically connected to at least one connecting post respectively, and the third redistribution layer is electrically connected to remaining connecting posts. The soldering pad group on the redistribution layer includes an input soldering pad electrically connected to the first redistribution wire and an output soldering pad electrically connected to the second redistribution wire.