A semiconductor package includes an interconnect component surrounded by a molding compound. The interconnect component comprises a first RDL structure. A second RDL structure is disposed on the interconnect component. A plurality of first connecting elements is disposed on the second RDL structure. A polish stop layer covers a surface of the interconnect component. A plurality of second connecting elements is disposed on and in the polish stop layer. At least one semiconductor die is mounted on the second connecting elements.

A structure includes an electrical interconnection between a first substrate including a plurality of protrusions and a second substrate including a plurality of solder bumps, the plurality of protrusions includes sharp tips that penetrate the plurality of solder bumps, and a permanent electrical interconnection is established by physical contact between the plurality of protrusions and the plurality of solder bumps including a metallurgical joint.

Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.