Semiconductor packages and methods of forming the same are provided. One of the semiconductor package includes a first die, a dummy die, a first redistribution layer structure, an insulating layer and an insulating layer. The dummy die is disposed aside the first die. The first redistribution layer structure is electrically connected to the first die and having connectors thereover. The insulating layer is disposed over the first die and the dummy die and opposite to the first redistribution layer structure. The insulating layer penetrates through the insulating layer.

Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a mold over and around a first die and a first via. The semiconductor package has a conductive pad of a first redistribution layer disposed on a top surface of the first die and/or a top surface of the mold. The semiconductor package includes a second die having a solder ball coupled to a die pad on a bottom surface of the second die, where the solder ball of the second die is coupled to the first redistribution layer. The first redistribution layer couples the second die to the first die, where the second die has a first edge and a second edge, and where the first edge is positioned within a footprint of the first die and the second edge is positioned outside the footprint of the first die.

An electronics package includes a support substrate, an electrical component having a first surface coupled to a first surface of the support substrate, and an insulating structure coupled to the first surface of the support substrate and sidewalls of the electrical component. The insulating structure has a sloped outer surface. A conductive layer encapsulates the electrical component and the sloped outer surface of the insulating structure. A first wiring layer is formed on a second surface of the support substrate. The first wiring layer is coupled to the conductive layer through at least one via in the support substrate.

Development of smart objects with electronic functions requires integration of printed components with IC chips or dies. Conventional chip or die bonding including wire bonding, flip chip bonding, and soldering may not be applicable to chip or die attachment on low temperature plastic surfaces used in physical objects. Printing conductive connection traces requires a smooth interface between contact pads of a chip and the surface of the physical object. In order to address this issue of chip/die attachment to a physical object, this disclosure provides embodiments to construct a fixture on a chip or die for attachment and electrical connection onto a physical object by printing operations and/or ACF bonding methods.

A semiconductor package a first package unit comprising a semiconductor chip; and a redistribution structure on the first package unit, wherein the redistribution structure comprises a plurality of wiring lines and a plurality of insulating layers on the plurality of wiring lines, wherein the plurality of wiring lines comprise first subset including a plurality of outermost wiring lines and a second subset, wherein a vertical distance between the plurality of outermost wiring lines and the first package unit is greater than a vertical distance between the second subset of the plurality of wiring lines and the first package unit, a respective surface roughness of each of the plurality of outermost wiring lines is different, and the respective surface roughness of each of the plurality of outermost wiring lines is based on a respective width of each of the plurality of outermost wiring lines in a horizontal direction.

Implementations of semiconductor devices may include a die coupled over a lead frame, a redistribution layer (RDL) coupled over the die, a first plurality of vias coupled between the RDL and the die, and a second plurality of vias coupled over and directly to the lead frame. The second plurality of vias may be adjacent to an outer edge of the semiconductor device and may be electrically isolated from the die.

Implementations of semiconductor devices may include a die coupled over a lead frame, a redistribution layer (RDL) coupled over the die, a first plurality of vias coupled between the RDL and the die, and a second plurality of vias coupled over and directly to the lead frame. The second plurality of vias may be adjacent to an outer edge of the semiconductor device and may be electrically isolated from the die.

A semiconductor package includes a substrate, a redistribution circuit layer, and a protective layer. The redistribution circuit layer is over the substrate and includes a plurality of functional pads electrically connected to the substrate, and a dummy pad pattern electrically disconnected from the plurality of functional pads, wherein the dummy pad pattern includes a plurality of pad portions connected to one another. The protective layer is disposed over the redistribution circuit layer and comprising a plurality of first openings spaced apart from one another and respectively revealing the plurality of pad portions.

A semiconductor package includes a substrate, a redistribution circuit layer, and a protective layer. The redistribution circuit layer is over the substrate and includes a plurality of functional pads electrically connected to the substrate, and a dummy pad pattern electrically disconnected from the plurality of functional pads, wherein the dummy pad pattern includes a plurality of pad portions connected to one another. The protective layer is disposed over the redistribution circuit layer and comprising a plurality of first openings spaced apart from one another and respectively revealing the plurality of pad portions.

Semiconductor devices and systems with conductive feedthroughs, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes a first interconnect, a second interconnect, and a layer between the first and second interconnects. The layer between the interconnects includes epitaxial structures and a conductive feedthrough. The conductive feedthrough extends through the layer and electrically couples the first and second interconnects, and one or more of the epitaxial structures are truncated by the conductive feedthrough.