An implantable electrode array that includes a carrier on which multiple spaced apart electrodes are disposed. Embedded in the module are control modules. The control modules are contained in packages. Portions of the packages extend outwardly from the carrier so as to be disposed against adjacent surfaces of the carrier. The packages contain conductive tracts that provide conductive links from the conductors internal to the carrier to the packaged control modules.

A structure includes a redistribution structure, which includes a bottom layer and a plurality of upper layers over the bottom layer. The redistribution structure also includes a power-ground macro extending from a topmost layer in the plurality of upper layers to a bottommost layer in the plurality of upper layers, and a metal pad in the bottom layer and overlapped by the power-ground macro. The metal pad is electrically disconnected from the power-ground macro.

A pre-packaged chip includes a chip having at least one electrical top contact at a top side of the chip and at least one electrical bottom contact at a bottom side, a first laminate layer on the top side, a second laminate layer on the bottom side, the first laminate layer and the second laminate layer being laminated together to sandwich the chip therebetween, a first metal layer on the first laminate layer and electrically contacted to the at least one electrical top contact via at least one top contact hole through the first laminate layer, and a second metal layer on the second laminate layer and electrically contacted to the at least one electrical bottom contact via at least one bottom contact hole through the second laminate layer. The pre-packaged chip is free from any contact hole extending from the first metal layer to the second metal layer.

A semiconductor package includes a semiconductor chip having a first surface that is an active surface and a second surface opposing the first surface, a first redistribution portion disposed on the first surface, the first redistribution portion including a lower wiring layer electrically connected to the semiconductor chip, a thermal conductive layer disposed on the second surface of the semiconductor chip, a sealing layer surrounding a side surface of the semiconductor chip and a side surface of the thermal conductive layer, and a second redistribution portion disposed on the sealing layer, the second redistribution portion including a first upper wiring layer connected to the thermal conductive layer, the second redistribution portion including a second upper wiring layer electrically connected to the semiconductor chip.

Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.

A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.

A die package and method is disclosed. In one example, the die package includes a die having a first die contact on a first side and a second die contact on a second side opposite the first side, and insulating material laterally adjacent to the die. A metal structure substantially directly contacts the surface of the second die contact, wherein the metal structure is made of the same material as the second die contact. A first pad contact on the first side of the die electrically contacts the first die contact, and a second pad contact on the first side of the die electrically contacts the second die contact via the metal structure. The insulating material electrically insulates the metal structure from the first die contact.

A semiconductor package structure is provided. The semiconductor package structure includes a redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. An antenna structure includes a first antenna element formed in the RDL structure, a first insulating layer covering the RDL structure, a second insulating layer formed on the first insulating layer, and a second antenna element formed on and in direct contact with the second insulating layer.

A package structure, including a conductive element, multiple dies, a dielectric body, a circuit layer and a patterned insulating layer, is provided. The multiple dies are disposed on the conductive element. A portion of the conductive element surrounds the multiple dies. The dielectric body covers the multiple dies. The circuit layer is disposed on the dielectric body. The circuit layer is electrically connected to the multiple dies. The patterned insulating layer covers the circuit layer. A portion of the patterned insulating layer is disposed between the dies that are adjacent. A manufacturing method of a package structure is also provided.

A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor die surrounded by a first molding compound layer. A redistribution layer (RDL) structure is formed on a non-active surface of the semiconductor die and the first molding compound layer. A second molding compound layer is formed on the RDL structure. An insulating capping layer covers the second molding compound layer. An antenna is electrically coupled to the semiconductor die and includes a first antenna element formed in the RDL structure and a second antenna element formed between the second molding compound layer and the insulating capping layer.